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Professor Hiroshi Mizuta

Academic Staff

Hiroshi. Mizuta received the B.S. and M.S. degrees in physics and the Ph.D. degree in electrical engineering from Osaka University, Osaka, Japan, in 1983, 1985, and 1993, respectively.He joined the Central Research Laboratory, Hitachi Ltd., Tokyo, Japan, in 1985, and has been engaged in research on high-speed heterojunction devices and resonant tunneling devices. From 1989 to 1991, he worked on quantum transport simulation, and also from 1997 to 2003 he worked on single-electron devices and other quantum devices as the Laboratory Manager and Senior Researcher at the Hitachi Cambridge Laboratory, Cambridge, UK., He has been Associate Professor of Physical Electronics from 2003 to 2007 and Adjunct Professor of Quantum Nanodevices from 2007 to 2010 at Tokyo Institute of Technology.

He is currently a Professor of Nanoelectronics at NANO Group, School of Electronics and Computer Science, University of Southampton, U.K (he has served as Head of NANO Group for Oct 2009 - Feb. 2011). He is concurrently a Professor, School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST). His current research interests include Si- and Graphene-based nanoelectronics, single-spin based qubits, NEM-MOS-SET hybrid devices and sensors, Si nanomaterials (nanodots and nanowires) and graphene, and ab-initio calculations of nanomaterial properties and nonequilrium quantum transport. He has published more than 320 peer-reviewed scientific papers and filed over 50 patents. He has also authored books and chapters, including “Physics and Applications of Resonant Tunnelling Diodes”, Cambridge University Press. Professor Mizuta is Fellow of the Institute of Physics (FInstP) and a member of the Physical Society of Japan, the Japan Society of Applied Physics and the Electron Device Society of the IEEE. He is also a member of the International Advisory Board of the MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand Centres of Research Excellences (CoREs).

Research

Projects

Grants

JAPAN MEXT KAKENHI KIBAN (S) Development of Integrated Graphene NEMS Hybrid Functional Devices For Autonomous Sensor Systems (PI) 2013 - 2018

EPSRC project SISSQIT (Silicon-based Integrated Single-Spin Quantum Information Technology) EP/H016872/1  (PI) 2010 - 2013

EPSRC-JST UK-Japan Stragegic Cooperative project NOVTLOS (Nonvolatile atom transistors and low-power logic systems) EP/J000469/1  (PI) 2011 - 2014

EU FP7 project NEMSIC (Nano-electro-mechanical-system-integrated-circuits) project (CoI), 2008 - 2011

SORST JST (Japan Science and Technology) project (Neosilicon-based nanoelectromechanical information technology) (CoI) 2007-2009

JAPAN MEXT KAKENHI Atom-scale design and analysis technology for single-dopant electronics (PI) 2010 - 2013

JAPAN MEXT KAKENHI Room temperature operation of single-dopant devices based on P and B co-d0ping (CoI) 2010 - 2012

JAPAN MEXT KAKENHI Development of dopant atom devices based on silicon nanostructures (CoI) 2011 - 2016

Professional

Qualifications

Professor, School of Materials Science, Japan Advanced Institute of Science and Technology ((JAIST)

Fellow of Institute of Physics (FInstP)

Member of IEEE Electron Device Society, Japan Society of Applied Physics, Physical Society of Japan

Member of Emerging Research Devices WG of International Technology Roadmap for Semiconductors (ERD/ITRS)

Professional activities

International Advisory Board Member of MacDiarmid Institute of Advanced Materials and Nanotechnology, New Zealand

Senoir Editor, Nanotechnology Section, Insciences Journal

Chair of Program Committee of IEEE Silicon Nanoelectronics Workshop 2007

General Chair of IEEE Silicon Nanoelectronics Workshop 2009

Co-chair of Emerging Technologies Committee of the International Conference on IC Design and Technology (ICICDT) 2011, 2012

Special Sessions Co-chair of IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH 2012)

Program Committee Member of 12th International Conference on Nanotechnology (IEEE NANO 2012): Nanoelectronics: Nanocircuits, Architecture

Scientific Committee Member of the 9th Conference on Functional and Nanostructured Materials 2012 (FNMA 2012)

Executive Committee Member of 11th International Conference on Global Research and Education: Inter Academia 2012

Advisory Board Member of Integrated Doctoral Education Program at Tokyo Institute of Technology

Program Co-chair, 39th International Conference on Micro and Nano Engineering (MNE2013)

Conferences attended

(Selected recent Invited Talks)

H. Mizutaet al., “He ion beam based nanofabrication and characterization of downscaled graphene nanodevices (Invited Talk)”, 2nd Bilateral Italy-Japan Seminar on Silicon Nanoelectronics for Advanced Applications, Riva del Garda,April (2013)

H. Mizuta et al., “Electronic states and transport in graphene nanostructures with point defects (Invited Talk)”, 2013 EMN West Meeting, Houston, January (2013)

H. Mizuta et al., "Downscaled Graphene Nanodevices: Fabrication and ab initio study (Invited Talk)", IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT2012) , Xi'an, October 2012.

H. Mizuta et al., "Silicon Hybrid NEMS Functional Devices (Keynote Lecture)", IEEE Special Seminar 'NanoTechnology in Electronics', London, September 2012.

H. Mizuta et al., "Fabrication and ab initio study of downscaled graphene nanoelectronic devices (Invited Talk)", SPIE Nanoscience + Engineering Conference on Nanotubes, Graphene and Associated Devices V, San Diego, August 2012. 

F. Arab Hassani, H. Mizuta et al., "Silicon Hybrid NEMS Functional Devices (Invited Talk)", 9th CAT-CVD Meeting, Narashino, June (2012)

H. Mizuta et al., "NEMS-MOS and NEMS-SET hybrid functional systems for advanced information processing and extreme sensing (Invited Talk)", the 2012 Villa Conference on Interaction Among Nanostructures (VCIAN2012) , Orlando, April 2012.

H. Mizuta et al., "Single-electron devices fused with nanoelectromechanical systems (Keynote)", BIT's 1st Annual World Congress on NANO-S&T, Dalian, October 2011.

H. Mizuta et al., "Silicon nanowires for advanced sensing: Electrical and electromechanical characteristics and functionalisation technology  (Invited Talk)", International Symposium on Advanced Hybrid Nano Devices (IS-AHND) , Tokyo, October 2011.

H. Mizuta et al., "Scaled Nanoelectromechanical (NEM) Hybrid Devices (Invited Talk)",  2011 IEEE International Conference on IC Design and Technology (ICICDT2011), Kaosiung, May 2011.

H. Mizuta et al., "Silicon nanofabrication for quantum information processing in Southampton (Invited Talk)", UK Silicon QIP Meeting, Cambridge, May 2011.

H. Mizuta et al., "Scaled silicon nanoelectromechanical hybrid systems (Invited Talk)", International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010), Shanghai, November 2010.

H. Mizuta et al., "Scaled Si nanoelectromechanical functional systems (Keynote Lecture)", 7th International Workshop on Functional and Nanostructured Material (FFNMA2010), Malta, July 2010.

H. Mizuta, "Hybrid Silicon Nanotechnologies for Advanced Information Processing and Sensing (Invited Talk)", International Symposium on Nano-Micro Multi-functional Devices, Kawasaki, March 2010.

H. Mizuta et al., "Scaled Silicon NEMS and Nanophonon Systems (Invited Talk)", International Symposium on Atom-scale Silicon Hybrid Nanotechnologies, Southampton, March 2010.

H. Mizuta, "Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications (Invited Talk)", EDIS2009 UK-Japan Workshop on Novel Phenomena and Techniques in Semiconductor Nanostructures, Tokyo, January 2010.

H. Mizuta, et al., "Co-integration of Silicon Nanoelectronic Devices and NEMS for ‘More-than-Moore’ Functional Systems (Invited Talk)”, TUAT/TEL International Workshop "Innovations of the Silicon, by the Silicon, for the Silicon", Tokyo, September 2009. 

H. Mizuta, et al., "Silicon-based Nanoelectromechanical Memory Devices (Invited Talk)", IEEE-NANO Satellite Workshop on Emerging Nonvolatile Memory, Genova, July 2009. 

H. Mizuta, et al., “Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk)”, 5th International Symposium on Nanvision Science / 10th Takayanagi Kenjiro Memorial Symposium, Hamamatsu, November 2008.

H. Mizuta, et al., "Co-integration of silicon nanodevices and NEMS for advanced information processing (Invited Talk)", 2008 International Conference on Solid-State and Integrated-Circuit Technology, Beijing, October 2008.

H. Mizuta, Y. Tsuchiya and S. Oda, “Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk)”, the 7th International Conference on Global Research and Education – Inter-Academia,, Pecs, September 2008.

H. Mizuta, Y. Tsuchiya and S. Oda, “Hybrid silicon nanotechnologies for advanced information processing (Invited Talk)”, International Conference on Nano and Microelectronics (ICONAME2008), Pondicherry, January 2008.

H. Mizuta, Y. Tsuchiya and S. Oda, “Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk)”, 4th TUAT-ECU Joint Symposium on Coherent Photonic Science and Nano Advanced Materials, Tokyo, December 2007.

H. Mizuta, “Functional silicon nanoelectromechanical information processing devices (Invited Talk)”, JSAP Frontier Process Workshop 2007, Tsukuba, August 2007.

H. Mizuta, “NEMS-based memory devices (Invited Talk)”, ESSDERC International Workshop on “Emerging non volatile memories, Munich, September 2007.

H. Mizuta, Y. Tsuchiya and S. Oda, “Physics and applications of Si-based nanoelectromechanical information devices (Keynote Lecture)”, 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3)”, Wellington, February 2007.

H. Mizuta and S. Oda, “Top-down and bottom-up approaches towards silicon nanoelectronics (Invited Talk)”, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD06), Perth, December 2006.

H. Mizuta and S. Oda, “Silicon nanoelectromechanical information devices – Present and future – (Invited Talk)“, International Topical Workshop “Tera- and Nano-Devices: Physics and Modeling”, Aizu-Wakamatsu, October 2006.

H. Mizuta and S. Oda, “Bottom-up approach to silicon nanoelectronics”(Invited Talk), European Nano Systems 2005 (ENS2005), Paris, December 2005.

H. Mizuta, M. Khalafalla, Z. A. K. Durrani, S. Uno, N. Koshida, Y. Tsuchiya and S. Oda, “Bottom-up Silicon Nanoelectronics (Invited Talk)”, 2004 7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT2004), Beijing, October 2004.

H. Mizuta, M. Khalafalla, Z. A. K. Durrani, S. Uno, N. Koshida, Y. Tsuchiya and S. Oda, “Electron Transport and Device Applications of Nanocrystalline Silicon (Invited Talk)”, International Symposium on Nanoscale Materials and Devices, 206th Meeting of the Electrochemical Society, Honolulu, October 2004.

H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z. A. K. Durrani, K. Nakazato and H. Ahmed “Nanosilicon for single-electron devices (Plenary Talk)”, International Conference on Advanced Materials and Nanotechnologies (AMN-1), Wellington, February 2003.

H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z. A. K. Durrani, K. Nakazato and H. Ahmed, “Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (Invited Talk)”, The International Conference of Polycrystalline Semiconductors 2002 (POLYSE2002), Nara, September 2002.

H. Mizuta, Y. Furuta, G. Evans, K. Nakazato, T. Kamiya, Y. T. Tan, Z. A. K. Durrani and H. Ahmed, “Local disorder effects on electron transport in silicon nanostructures (Invited Talk)”, TRENDS IN NANOTECHNOLOGY 2001 (TNT2001), Segovia, September 2001.

H. Mizuta, H.-O. Müller, K. Tsukagoshi, D. Williams, K. Nakazato, Z. Durrani, A. Irvine, S. Amakawa, G. Evans and H. Ahmed, “Nanoscale Coulomb blockade memory and logic devices (Invited Talk)”, TRENDS IN NANOTECHNOLOGY 2000, Toledo, October 2000.

K. Nakazato, K. Itoh, H. Ahmed, H. Mizuta, T. Kisu, M. Kato and T. Sakata, “Phase-state Low Electron-number Drive Random Access Memory (PLEDM) (Solicited Paper)”, IEEE International Solid-State Circuit Conference, San Francisco, February 2000.

H. Mizuta, “Single- and few-electron memories (Invited Talk)”, 12th Japanese-German Information Technology Forum, Dresden, May 1999.

Publications

Mizuta, Hiroshi, Wagner, Mathias and Nakazato, Kazuo (2001) The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs). IEE Trans Electron Devices, 48, (6), 1103-1108.

Khalafalla, Mohammed A H, Durrani, Zahid Ali Khan and Mizuta, Hiroshi (2003) Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors. IEEE Trans Nanotechnology, 2, (4), 271-276.

Uno, Shigeyasu, Mori, Nobuya, Nakazato, Kazuo, Koshida, Nobuyoshi and Mizuta, Hiroshi (2005) Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers. Physical Review, B72, 035337-1-035337-11.

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Observation of quantum level spectrum for silicon double single-electron transistors. Applied Physics Express, 1, 053705.

Rafiq, M., Durrani, Z.A.K., Mizuta, Hiroshi, Colli, A., Servati, P., Ferrari, A.C., Milne, W.I. and Oda, S. (2008) Room temperature single electron charging in single silicon nanochains. Journal of Applied Physics, 103, 053705.

Akhtar, S., Usami, K. , Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6. Applied Physics Express, 1, 014003.

Yamahata, G. , Tsuchiya, Yoshishige, Oda, S. , Durrani, Z.A.K. and Mizuta, Hiroshi (2008) Control of electrostatic coupling observed for silicon double quantum dot structures. Japanese Journal of Applied Physics, 47, 4820-4826.

Tanaka, A. , Tsuchiya, Yoshishige, Usami, K. , Saito, S., Arai, T. , Mizuta, Hiroshi and Oda, S. (2008) Synthesis of assembled nanocrystalline Si dots film through the Langmuir-Blodgett technique. Japanese Journal of Applied of Physics, 47, 3731-3734.

Ogi, J., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge. Microelectronic Engineering, 85, (5-6), 1410-1412. (doi:10.1016/j.mee.2008.01.068).

Manoharan, M. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation. Applied Physics Letters, 92, (9), 092110. (doi:10.1063/1.2891063).

Manoharan, M., Kawata, Y. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe. Journal of Applied Physics, 103, (4), 043719. (doi:10.1063/1.2885343).

Manoharan, M., Pruvost, B. , Mizuta, Hiroshi and Oda, S. (2008) Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors. IEEE Transactions on Nanotechnology, 7, 266-272.

Rafiq, M. A. , Mizuta, Hiroshi, Uno, S. and Durrani, Z.A.K. (2008) Fabrication of vertical nanopillar devices. Microelectronic Engineering, 84, 1515-1518.

Mizuta, Hiroshi and Oda, S. (2008) Bottom-up approach to silicon nanoelectronics (Invited paper). Microelectronics Journal, 39, 171-176.

Zheng, Y. , Mizuta, Hiroshi and Oda, S. (2008) Theoretical study of nonequilibrium electron transport and charge distribution in a three-site quantum wire. Japanese Journal of Applied Physics, 47, 371-382.

Nagami, T., Mizuta, Hiroshi, Momo, N. , Tsuchiya, Yoshishige, Saito, S. , Arai, T. , Shimada, T. and Oda, S. (2007) Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory. IEEE Transactions on Electron Devices, ED-54, (No. 5), 1132-1139.

Pruvost, B. , Mizuta, Hiroshi and Oda, S. (2007) 3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs. IEEE Transactions on Nanotechnology, 6, 218-224.

Hippo, D. , Urakawa, K. , Kawata, Y. , Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N. and Oda, S. (2007) New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures. Japanese Journal of Applied Physics, 46, 633-637.

Oda, S., Huang, S. Y. , Salem, M. A. , Hippo, D. and Mizuta, Hiroshi (2007) Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals. Physica E, 38, 218-224.

Kawata, Y. , Khalafalla, M. , Usami, K. , Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor. Japanese Journal of Applied Physics, 46, 4386-4389.

Khalafallah, M. , Mizuta, Hiroshi and Durrani, Z. A. K. (2006) Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints. Physical Review B, 74, 035316.

Tsuchiya, Yoshishige, Takai, K. , Momo, N. , Nagami, T. , Yamaguchi, S. , Shimada, T. , Mizuta, Hiroshi and Oda, S. (2006) Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots. Journal of Applied Physics, 100, 094306.

Surawijiya, A. , Mizuta, Hiroshi and Oda, S. (2006) Observation and analysis of tunneling properties of single spherical nanocrystalline silicon quantum dot. Japanese Journal of Applied Physics, 45, 3638-3641.

Rafiq, M. , Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S. , Uno, S. , Durrani, Z. and Milne, W. (2006) Hopping conduction in size-controlled Si nanocrystals. Journal of Applied Physics, 100, 014303.

Tanaka, A. , Yamahata, G. , Tsuchiya, Yoshishige, Usami, K. , Mizuta, Hiroshi and Oda, S. (2006) High-density assembly of nanocrystalline silicon quantum dots. Current Applied Physics, 6, 344-347.

Khalafallah, M. , Mizuta, Hiroshi, Oda, S. and Durrani, Z. A. K. (2006) Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures. Current Applied Physics, 6, 536-540.

Zheng, Y. , Mizuta, Hiroshi, Tsuchiya, Yoshishige, Endo, M. , Sato, D. and Oda, S. (2005) In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD. Journal of Applied Physics, 97, 023527.

Uno, S. , Mori, N. , Nakazato, K. , Koshida, N. and Mizuta, Hiroshi (2005) Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers. Physical Review B, 72, 035337.

Walker, P. , Uno, S. and Mizuta, Hiroshi (2005) Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position. Japanese Journal of Applied Physics, 44, 8322.

Rafiq, M. , Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S. , Uno, S. , Durrani, Z. and Milne, W. (2005) Charge injection and trapping in silicon nanocrystals. Applied Physics Letters, 87, 182101.

Uno, S. , Mori, N., Nakazato, K. , Koshida, N. and Mizuta, Hiroshi (2005) Reduction of acoustic phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides. Journal of Applied Physics, 97, 113506.

Salem, M. A. , Mizuta, Hiroshi, Oda, S., Fu, Y. and Willander, M. (2005) AFM current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2. Japanese Journal of Applied Physics, 44, L88-L91.

Salem, M. A., Mizuta, Hiroshi and Oda, S. (2004) Probing electron charging in nanocrystalline Si dots using Kelvin Probe Force Microscopy. Applied Physics Letters, 85, 3262-3264.

Mizuta, Hiroshi, Furuta, Y. , Kamiya, T. , Tan, Y. T, Durrani, Z. A. K. , Amakawa, S. , Nakazato, K. and Ahmed, H. (2004) Nanosilicon for single-electron devices. Current Applied Physics, 4, 98-101.

Walker, P. , Mizuta, Hiroshi, Uno, S. , Furuta, Y. and Hasko, D. (2004) Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel. IEEE Transactions on Electron Devices, ED-54, 212-218.

Khalafalla, M. , Mizuta, Hiroshi and Durrani, Z. A. K. (2004) Coherent States in a Coupled Quantum Dot Nanocrystalline Silicon Transistor. Applied Physics Letters, 85, 2262-2264.

Kamiya, T. , Furuta, Y. , Tan, Y. -T. , Durrani, Z. A. K. , Mizuta, Hiroshi and Ahmed, H. (2003) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices. Solid State Phenomena, 93, 351-354.

Ikeda, M. , Nakazato, K. , Mizuta, Hiroshi, Green, M. , Hasko, D. and Ahmed, H. (2003) Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation. Nanotechnology, 14, 128-133.

Uno, S. , Nakazato, K., Yamaguchi, S. , Koshida, N. and Mizuta, Hiroshi (2003) New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si. Nanotechnology, 2, 301-307.

Khalafallah, M. , Durrani, Z. A. K. and Mizuta, Hiroshi (2003) Double-gate control of electronic transport in nanoscale point-contact in neo-silicon. IEEE Transactions on Nanotechnology, 2, 271-276.

Mizuta, Hiroshi, Furuta, Y. , Kamiya, T. , Tan, Y. T. , Durrani, Z. A. K. , Nakazato, K. and Ahmed, H. (2003) Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors. Solid State Phenomena, 93, 419-429.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T. , Tan, Y. T. , Durrani, Z. A. K. and Taniguchi, K. (2002) Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors. Japanese Journal of Applied Physics, 41, 2675-2678.

Evans, G. and Mizuta, Hiroshi (2002) Analysis of negative differential conductance in a two-island Coulomb blockade system by a polytope approximation in phase space. Journal of Applied Physics, 92, 3124-3129.

Evans, G. , Mizuta, Hiroshi and Ahmed, H. (2001) Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime. Japanese Journal of Applied Physics, 40, 5837-5840.

Pooley, D. M. , Ahmed, H. , Mizuta, Hiroshi and Nakazato, K. (2001) Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers. Journal of Applied Physics, 90, 4772-4776.

Mizuta, Hiroshi, Muller, H. O. , Tsukagoshi, K. , Williams, D. , Durrani, Z. , Irvine, A. , Amakawa, S. , Evans, G. , Nakazato, K. and Ahmed, H. (2001) Nanoscale Coulomb blockade memory and logic devices. Nanotechnology, 12, 155-159.

Furuta, Y. , Mizuta, Hiroshi, Nakazato, K. , Tan, Y. T. , Kamiya, T. , Durrani, Z. A. K. , Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon. Japanese Journal of Applied Physics, 40, L615-L617.

Mizuta, Hiroshi, Wagner, M. and Nakazato, K. (2001) The role of tunnel barriers in Phase-state Low Electron-number Drive Transistors (PLEDTRs). IEEE Transactions on Electron Devices, ED-48, 1103-1108.

Amakawa, S. , Mizuta, Hiroshi, Nakazato, K. and Ahmed, H. (2001) Analysis of multi-phase clocked electron pumps consisting of single-electron transistors. Journal of Applied Physics, 89, 5001-5008.

Muller, H. O. , Williams, D. and Mizuta, Hiroshi (2001) Design optimization of Coulomb blockade devices. VLSI Design, 13, 193-198.

Muller, H. O. , Williams, D. and Mizuta, Hiroshi (2000) Coulomb blockade and disorder in 2D quantum dot arrays. Japanese Journal of Applied Physics, 39, L723-L725.

Amakawa, S. , Hoh, K. , Fujishima, M. , Mizuta, Hiroshi and Tsukagoshi, K. (2000) Scaling of single-electron tunneling current through ultrasmall tunnel junction. Journal of Physics: Condensed Matter, 12, 7223-7228.

Pepin, A. , Vieu, C. , Launois, H. , Rosmeulen, M., Rossum, M. van, Muller, H. O. , Williams, D. , Mizuta, Hiroshi and Nakazato, K. (2000) Fabrication of MOS-integrated metallic single-electron memories. Microelectronic Engineering, 53, 265-268.

Muller, H. -O and Mizuta, Hiroshi (2000) Memory cell simulation on the nanometer scale. IEEE Transaction on Electron Devices, ED-47, 1826-1830.

Muller, H. -O, Williams, D. , Mizuta, Hiroshi and Durrani, Z. A. K. (2000) Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance. Materials Science and Engineering, B74, 36-39.

Yamaguchi, K. , Teshima, T. and Mizuta, Hiroshi (1999) Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions. IEEE Transactions on Electron Devices, ED-46, 1159-1165.

Nakazato, K. , Itoh, K. , Mizuta, Hiroshi and Ahmed, H. (1999) Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cell. Electronics Letters, 35, 848-850.

Muller, H. -O. , Williams, D. , Mizuta, Hiroshi, Durrani, Z. A. K. , Irvine , A. C. and Ahmed, H. (1999) Simulation of Si multiple tunnel junctions. Physica B, 272, 85-87.

Katayama, K. , Mizuta, Hiroshi, Muller, H. -O. , Williams, D. and Nakazato, K. (1999) Design and analysis of high-speed random access memory with Coulomb blockade charge confinement. IEEE Transactions on Electron Devices, ED-46, 2210-2216.

Muller, H. -O. , Boero , M. , Vincent, J. K. , Inkson, J. C. , Mizuta, Hiroshi and Mulheran, P. A. (1999) Origin of yield problems of single electron devices based on evaporated granular films. Applied Physics Letters, 75, 1634-1636.

Mizuta, Hiroshi (1999) Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots. Microelectronics Journal, 30, 1007-1017.

Pooley, D. M. , Ahmed, H. , Mizuta, Hiroshi and Nakazato, K. (1999) Coulomb blockade in silicon nano-pillars. Applied Physics Letters, 74, 2191-2193.

Mizuta, Hiroshi (1998) Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states. VLSI DESIGN, 6, 103-106.

Muller , H. -O. , Katayama, K. and Mizuta, Hiroshi (1998) Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays. Journal of Applied Physics, 84, 5603-5609.

Mizuta, Hiroshi (1996) Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes. Japanes Journal of Applied Physics, 35, 2012-2019.

Jansen, P. , Mizuta, Hiroshi and Yamaguchi, K. (1996) Theoretical study of tunnelling current in the access region of various heterojunction field-effect transistor structures. Journal of Applied Physics, 79, 3603-3607.

Goodings, C. J. , Mizuta, Hiroshi and Cleaver, J. R. A. (1994) Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers. Journal of Applied Physics, 75, 2291-2293.

Goodings, C. J. , Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Variable-area resonant tunneling diodes using implanted in-plane gates. Journal of Applied Physics, 76, 1276-1286.

Ohkura, Y. , Mizuta, Hiroshi, Ohbu, I. , Kagaya, O. , Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.

Ohbu, I., Takahama, M. and Mizuta, Hiroshi (1993) Time dependence of the surface Fermi level of GaAs in atomosphere. Applied Physics Letters, 62, 3279-3281.

Wagner, M. and Mizuta, Hiroshi (1993) Complex-energy analysis of intrinsic lifetimes of resonances in biased multiple quantum wells. Physical Review B, 48, 14393-14406.

Wagner, M. and Mizuta, Hiroshi (1993) Coherent-electron intrinxic multistability in a double-barrier tunnelling diode. Applied Physics Letters, 63, 2268-2270.

Wagner, M. and Mizuta, Hiroshi (1993) Multistable charge build-up and a new switching principle in coherent-electron tunneling devices. Japanese Journal of Applied Physics, 32, L520-L523.

Kusano, C. , Mizuta, Hiroshi, Mochizuki, K. and Yamaguchi, K. (1992) Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors. Japanese Journal of Applied Physics, 31, L1650-L1653.

Mizuta, Hiroshi, Goodings, C. J. , Wagner, M. and Ho, S. (1992) Three-dimensional numerical simulation of multi-mode quantum transport in zero-dimensional resonant tunneling diodes. Journal of Physics: Condensed Matter, 4, 8783-8800.

Rabinzohn, P. D. , Usagawa, T. , Mizuta, Hiroshi and Yamaguchi, K. (1991) The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation. IEEE Transactions on Electron Devices, ED-38, 222-231.

Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. Journal of Physics: Condensed Matter, 3, 3739-3756.

Mizuta, Hiroshi, Yamaguchi, K. , Yamane, M. , Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's. IEEE Transactions on Electron Devices, ED-36, 2307-2314.

Hiruma, K. , Mori, M. , Yanakura, E. , Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.

Kusano, C. , Tanoue, T. , Mizuta, Hiroshi and Takahashi, S. (1988) Multiple-valued logic application of a triple-well resonant tunneling diode. IEEE Transactions on Electron Devices, ED-35, pp. 2453.

Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1988) A new triple-well resonant tunneling diode with controllable double-negative resistance. IEEE Transactions on Electrons Devices, ED-35, 1951-1956.

Tanoue, T. , Mizuta, Hiroshi and Takahashi, S. (1988) A Triple-well resonant tunneling diode for multiple-valued logic application. IEEE Transactions on Electron Devices, EDL-9, 265-367.

Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's. IEEE Transactions on Electron Devices, ED-34, 2027-2033.

Mizuta, Hiroshi and Kotani, A. (1985) Theory of spin-polarized Auger electrons from ferromagnetic materials. Journal od the Physical Society of Japan, 54, 4452-4461.

Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science, 305, 363-368.

Kamiya, T., Durrani, Z.A.K., Ahmed, H., Sameshima, T., Furuta, Y., Mizuta, Hiroshi and Lloyd, N. (2003) Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices. Journal of Vacuum Science and Technology B, 21, 1000-1003.

Walker, P. and Mizuta, Hiroshi (2006) Energy-balance modeling of short channel single-GB thin film transistors. Int. Journal of Computational Science and Engineering, 2, 148-157.

Rafiq, M. A. , Durrani, Z. A. K. , Mizuta, Hiroshi, Colli, A. , Servati, P. , Ferrari, A.C. , Milne, W. I. and Oda, S. (2008) Silicon nanochains: fundamental properties and applications. At 29th International Conference on the Physics of Semiconductors (ICPS-29), Rio de Janeiro,

Li, C. B. , Usami, K. , Mizuta, Hiroshi and Oda, S. (2008) The impacts of silicon substrate surface conditions on the VLS growth of germanium nanowires. At 29th International Conference on the Physics of Semiconductors (ICPS-29), Rio de Janeiro,

Zhou , X. , Rafiq, M. A. , Mizuta, Hiroshi and Oda, S. (2008) P-type Si nanocrystal thin-film transistors. At IEEE Silicon Nanoelectronics Workshop, Honolulu,

Tsuchiya, Yoshishige, Matsuda, S. , Nagami, T. , Saito, S. , Arai, T. , Shimada, T. , Oda, S. and Mizuta, Hiroshi (2008) Switching properties of electromechanically-bistable and multistable bridges for nonvolatile memory applications. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , M0415.

Sawai, S. , Uno, S. , Okamoto, M. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , M0200.

Ogi, J. , Manoharan, M. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Anomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , P1-27.

Nagami, T. , Tsuchiya, Yoshishige, Matsuda, S. , Saito, S. , Arai, T. , Shimada, T. , Mizuta, Hiroshi and Oda, S. (2008) Transient response analysis of programming/readout characteristics for NEMS memory. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , M0430.

Manoharan, M. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor? At IEEE Silicon Nanoelectronics Workshop, Honolulu, , P1-22.

Kawata, Y. , Yamaguchi, T. , Ishibashi, K. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Observation of quantum level spectrum for silicon double single-electron transistors. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , S0245.

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Electron transport through silicon multiple quantum dot array devices. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , S0445.

Li, C. G. , Usami, K. , Mizuta, Hiroshi and Oda, S. (2008) Controlled Ge nanowire grouwth on patterned Au catalyst substrate. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , P2-4.

Pruvost, B. , Mizuta, Hiroshi and Oda, S. (2008) Design optimization of NEMS switches for single-electron logic applications. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , P1-32.

Hippo, D. , Urakawa, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N. and Oda, S. (2008) Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization. At Porous Semiconductors Science and Technology 2008, Mallorca,

Rafiq, M. A. , Durrani, Z. A. K. , Mizuta, Hiroshi and Oda, S. (2008) “Single electron transport simulations in silicon nanochains. At Annual Conference on Condensed Matter and Material Physics 2008, London,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2008) Hybrid silicon nanotechnologies for advanced information processing. At International Conference on Nano and Microelectronics (ICONAME2008), Pondicherry, , pp 41-45.

Ogi, J. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge. At 33rd International Conference on Micro- and Nani-Engineering (MNE2007), Copenhagen,

Yamahata, G., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Control of electrostatic coupling observed for Si double quantum dot structures. At 39th International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, , pp598-599.

Kawata, Y. , Nishimoto, S. , Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout. At 39th International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, , pp 1126-1127.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Functional silicon nanoelectromechanical information processing devices. At Frontier Process Workshop 2007, Tsukuba, , pp 65-86.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Frontier Process Workshop 2007. At International Workshop on “Emerging non volatile memories, Munich,

Zheng, Y., Mizuta, Hiroshi and Oda, S. (2007) Nonequilibrium Transport Properties for a Three-site Quantum wire Model. At 15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo,

Manoharan, M. , Kawata, Y. , Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions. At IEEE Silicon Nanoelectronics Workshop, Kyoto, , pp 151-152.

Higashijima, S. , Sawai, S. , Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2007) DFT Simulation of Dynamic Charge States in Double Silicon Quantum Dots. At IEEE Silicon Nanoelectronics Workshop, Kyoto, , pp 169-170.

Tsuchiya, Yoshishige, Kurihara, T., Saito, D., Niikura, H., Mizuta, Hiroshi and Oda, S. (2007) High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers. At IEEE Silicon Nanoelectronics Workshop, Kyoto, , pp 145-146.

Kawata, Y., Manoharan, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits. At IEEE Silicon Nanoelectronics Workshop, Kyoto, , pp 119-120.

Pruvost, B., Mizuta, Hiroshi and Oda, S. (2007) Voltage-Limitation-Free Compact SET Model Incorporating the Effects of Spin-Degenerate Discrete Energy States. At IEEE Silicon Nanoelectronics Workshop, Kyoto, , pp 51-52.

Zheng, Y., Mizuta, Hiroshi and Oda, S. (2007) Theory of Nonequilibrium Transport Properties for a Three-site Quantum Wire. At International Symposium on Frontiers in Computational Science of Nanoscale Transport, Tokyo, , pp 79-80.

Sawai, S., Mizuta, Hiroshi, Higashijima, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige and Oda, S. (2007) Ab-initio simulation of phonon properties of ultra-thin silicon films. At International Symposium on Frontiers in Computational Science of Nanoscale Transport, Tokyo, , pp 97-98.

Cheong, H. -J. , Tanaka, A., Hippo, D., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Light emission from size reduced nanocrystal silicon quantum dots. At CLEO2007

Tsuchiya, Yoshishige, Ikezawa, K., Nakatsukasa, T., Inaba, N., Usami, K., Mizuta, Hiroshi and Oda, S. (2007) Study of silicon nanodot formation in pulsed-gas VHF plasma process. At 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3, Wellignton, , p 436.

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2007) Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method. At 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3), Wellington, , p 543.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Physics and applications of Si-based nanoelectromechanical information devices (Plenary Talk). At 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3), Wellington, , p334.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2006) Top-down and bottom-up approaches towards silicon nanoelectronics. At Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD06), Perth, , FT-3.

Mizuta, Hiroshi and Oda, S. (2006) Silicon nanoelectromechanical information devices – Present and future –. At International Topical Workshop “Tera- and Nano-Devices: Physics and Modeling”, Aizu-Wakamatsu, , pp 10-11.

Kawata, Y., Khalafalla, M.A.H., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor. At 2006 International Conference on Solid State Devices and Materials, Yokohama, , pp 812-813.

Khalafalla, M. A. H., Mizuta, Hiroshi, Oda, S. and Durrani, Z.A.K. (2006) Possible non-equilibrium Kondo effect in a nanocrystalline silicon point-contact transistor. At 2006 International Conference on Solid State Devices and Materials, Yokohama, , pp 828-829.

Manoharan, M., Mizuta, Hiroshi and Oda, S. (2006) Hybrid simulation of the RF-SET and its charge sensitivity analysis. At 2006 International Conference on Solid State Devices and Materials, Yokohama, , pp 736-737.

Rafiq, M. A., Mizuta, Hiroshi, Uno, S. and Durrani, Z. A. K. (2006) Fabrication of vertical nanopillar devices. At 32nd International Conference on Micro- and Nano-Engineering 2006, Barcelona,

Khalafalla, M. A. H., Mizuta, Hiroshi, Oda, S. and Durrani, Z. A. K. (2006) Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor. At 28th International Conference on the Physics of Semiconductors, Vienna, , 203.

Hippo, D., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Urakawa, K. and Koshida, N. (2006) Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etching method. At Conference on lasers and electro-optics / Quantum electronics and laser science conference, Long Beach, , 114.

Ogawa, K., Tomiyama, K., Tan, Y., Doan, M., Bin, Y., Kwong, D. -L., Yamada, S. , Cole, J., Katayama, Y., Mizuta, Hiroshi and Oda, S. (2006) Broadband variable chromatic dispersion in photonic-band electro-optic wavefuide. At Optical Fiber Communication Conference & Exposition and the National Fiber Optic Engineers Conference 2006, Anaheim,

Pruvost, B., Mizuta, Hiroshi and Oda, S. (2006) Design and analysis of functional NEMS-gate MOSFETs and SETs. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , pp 35-36.

Ogi, J. , Mono, N., Khalafalla, M. A. H., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Fabrication and evaluation of Si nanobridge transistor. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , pp 123-124.

Nagami, T., Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Electro-mechanical simulation of programming / readout characteristics for NEMS memory. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , 105-106.

Momo, N., Nagami, T., Matsuda, S., Tsuchiya, Yoshishige, Saito, S., Arai, T., Kimura, Y. , Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Fabrication and characterization of nanoscale suspended floating gates for NEMS memory. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , pp 109-110.

Mizuta, Hiroshi and Oda, S. (2005) Bottom-up approach to silicon nanoelectronics. At European Nano Systems 2005, Paris, , pp 103-108.

Oda, S., Huang, S.-Y., Salem, M. A. and Mizuta, Hiroshi (2005) Charge storage in silicon nanocrystals and device application. At 1st International Workshop on Semiconductor Nanocrystals, Budapest, , pp 172-182.

Hippo, D., Chong, H. -J. , Tanaka, A., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Urakawa, K. and Koshida, N. (2005) A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures. At 2nd International Conference on Group IV Photonics, Antwerp,

Surawajiya, A., Mizuta, Hiroshi and Oda, S. (2005) Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot. At 2005 International Conference on Solid State Devices and Materials, Kobe, , pp 180-181.

Rafiq, M. A. , Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uno, S., Durrani, Z. A. K. and Milne, W. I. (2005) Temperature dependence of space charge limited current (SCLC) in thin films of silicon nanocrystals. At 2005 International Conference on Solid State Devices and Materials, Kobe, , pp 424-425.

Tanaka, A., Yamahata, G., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) Formation of nanocrystalline silicon quantum dot arrays. At 12th International Conference on Composite / Nano Engineering, Tenerife,

Mizuta, Hiroshi (2005) Physics and applications of silicon nanoelectromechanical information devices. At FIS Conference on Future Integrated Systems, Cambridge,

Walker, P. and Mizuta, Hiroshi (2005) Energy-balance modeling of short channel single-GB thin film transistors. At 15th Workshop on Modelling and Simulation of Electron Devices, Pisa, , pp 19 -20.

Kurokawa, Y., Higashijima, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, s. (2005) Atomistic simulation of quantum transport in nanoscale silicon transistors. At 15th Workshop on Modelling and Simulation of Electron Devices, Pisa, , pp 19 -20.

Kurokawa, Y. , Higashijima, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Electronic states and quantum transport in Si nanorod transistors. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Huang, S., Mizuta, Hiroshi and Oda, S. (2005) Charge operation of nitrided nanocrystalline silicon dot memory devices. At China International Conference on Nanoscience and Technology, Beijing,

Higashijima, S. , Kurokawa, Y., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Ab-initio method of designing artificial quantum bits. At 15th Workshop on Modelling and Simulation of Electron Devices, Pisa, , pp 19-20.

Huang, S., Mizuta, Hiroshi and Oda, S. (2005) Charging-storing-discharging process in nitrided nanocrystalline silicon dots. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Higashijima, S., Kurokawa, Y., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Ab-initio calculations of electronic states in nano-crystalline Si quantum dots. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Khalafalla, M., Mizuta, Hiroshi, Oda, S. and Durrani, Z. A. K. (2005) Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Khalafalla, M. , Mizuta, Hiroshi, Durrani, Z. A. K., Ahmed, H. and Oda, S. (2005) Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structure. At 2nd International Conference on Advanced Materials and Nanotechnology, Queenstown,

Khalafalla, M. , Mizuta, Hiroshi, Oda, S. and Durrani, Z. A. K. (2005) Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors. At International Conference on Nanoelectronics, Nanostructures and Carrier Interactions, Atsugi,

Yamahata, G., Tanaka, A., Kawata, Y., Tsuchiya, Yoshishige, Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2005) Bottom-up fabrication of Si nanodot transistors usign the nc-Si dots solution. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Nagami, T., Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2005) Mechanical property analysis and structural optimization for NEMS memory devices. At IEEE Silicon Nanoelectronics Workshop, Kyoto,

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) High-Density Assembly of Nanocrystalline Silicon Quantum Dots. At 2nd International Conference on Advanced Materials and Nanotechnology, Queenstown,

Zheng, Y., Mizuta, Hiroshi and Oda, S. (2008) Nonequilibrium transport properties for a three-site quantum wire model. Phy. Stat. Sol. (C), 5, 56-60.

Tanaka, A., Yamahata, G., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) Assembly of Nanocrystalline Silicon Quantum Dots based on a Colloidal Solution Method. At IEEE Conference on Nanotechnology, IEEE-NANO, Nagoya, Japan, 11 - 15 Jul 2005.

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N., Tsuchiya, Yoshishige and Oda, S. (2004) Bottom-up Silicon Nanoelectronics. At 2004 7th International Conference on Solid-State and Integrated Circuits Technology, Beijing, , pp 864-868.

Tsuchiya, Yoshishige, Fujita, H., Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition. At 2004 TMS Electronic materials conference and exhibition, Notre Dame, , 30.

Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. At 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo,

Uno, S., Mori, N., Nakazato, K. and Mizuta, Hiroshi (2004) Significant reduction of phonon scattering potential in 1D Si quantum dot array interconnected with thin oxide layers. At the 2004 International Conference on Solid State Devices and Materials, Tokyo, , pp 116-117.

Salem, M. A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy. At the 2004 International Conference on Solid State Devices and Materials, Tokyo, , pp 884-885.

Salem, M. A. , Mizuta, Hiroshi, Oda, S., Fu, Y. and Willander, M. (2004) AFM current imaging for surface oxidized nanocrystalline silicon dots. At 2004 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Niigata, , p 241.

Uno, S., Mori, N., Nakazato, K., Koshida, N. and Mizuta, Hiroshi (2004) Electron-phonon interaction in Si quantum dots interconnected with thin oxide layers. At 27th International Conference on the Physics of Semiconductors, Flagstaff, , p 76.

Tsuchiya, Yoshishige, Takai, K., Momo, N., Oda, S., Yamaguchi, S., Shimada, T. and Mizuta, Hiroshi (2004) High-speed and Nonvolatile Nano Electromechanical Memory incorporating Si Quantum Dots. At 27th International Conference on the Physics of Semiconductors, Flagstaff, , p 208.

Tsuchiya, Yoshishige, Takai, K., Momo, N., Yamaguchi, S., Shimada, T., Koyama, S., Takashima, K., Higo, Y., Mizuta, Hiroshi and Oda, S. (2004) Nano Electromechanical Memory Device using Nanocrystalline Si Dots. At 2004 Silicon Nanoelectronics Workshop, Honolulu, , pp 101-102.

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N. , Tsuchiya, Yoshishige and Oda, S. (2004) Electron Transport and Device Applications of Nanocrystalline Silicon. At International Symposium on Nanoscale Materials and Devices, 206th Meeting of the Electrochemical Society, Honolulu, , p 1012.

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K. , Ahmed, H. and Oda, S. (2004) Intergrain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistor. At International Conference on Polycrystalline Semiconductors 2004, Potsdum,

Khalafalla, M. A. H., Mizuta, Hiroshi, Durrani, A. K., Ahmed, H. and Oda, S. (2004) Observation of Coherent States in Coupled Nanocrystalline Si Double Dots at 4.2K. At 27th International Conference on the Physics of Semiconductors, Flagstaff, , p 140.

Khalafalla, M. A. H., Mizuta, Hiroshi, Durrani, A. K., Ahmed, H. and Oda, S. (2004) Electron Coupling States in quantum dots in Nanocrystalline Silicon. At 2004 Silicon Nanoelectronics Workshop, Honolulu, , pp 137-138.

Uno, S., Mori, N., Nakazato, K., Koshida, N. and Mizuta, Hiroshi (2004) Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers. At 2004 Silicon Nanoelectronics Workshop, Honolulu, , pp 121-122.

Walker, P. M. and Mizuta, Hiroshi (2004) The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location. At 2004 Silicon Nanoelectronics Workshop, Honolulu, , pp 29-30.

Tsuchiya, Yoshishige, Iwasa, T., Tanaka, A., Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method. At MRS Spring Meeting , p 277.

Walker, P. M., Mizuta, Hiroshi, Uno, S. and Furuta, Y. (2003) Improved device characteristics for deca-nanometre scale TFTs with a single GB in the channel. At 12th MEL-ARI/NID Workshop, Cork,

Khalafalla, M., Mizuta, Hiroshi and Durrani, Z. A. K. (2003) Dual gate control of Coulomb blockade oscillations in a double Si grain structure. At 12th MEL-ARI/NID Workshop, Cork,

Khalafalla, M., Mizuta, Hiroshi and Durrani, Z. A. K. (2003) Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors. At 2003 Silicon Nanoelectronics Workshop, Kyoto, , pp 96-97.

Amakawa, S., Nakazato, K. and Mizuta, Hiroshi (2003) A surface-potential-based cylindrical surrounding-gate MOSFET model. At 2003 International Conference on Solid State Devices and Materials, Tokyo, 16 - 18 Sep 2003.

Walker, P. M., Furuta, Y. and Mizuta, Hiroshi (2003) Grain boundary effects on subthreshold behaviour in single grain boundary nano-TFTs. At 2003 International Conference on Simulation of Semiconductor Processes and Devices, Boston,

Uno, S., Durrani, Z. A. K., Khalafalla, M., Nakazato, K. and Mizuta, Hiroshi (2003) New insights into electron emission from silicon nanocrystallites. At 2003 Silicon Nanoelectronics Workshop, Kyoto, , pp 116-117.

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Nakazato, K. and Ahmed, H, (2003) Nanosilicon for single-electron devices. At International Conference on Advanced Materials and Nanotechnologies, Wellington, , p Tu3-1.

Kamiya, T., Furuta, Y., Tan, Y. -T., Durrani, Z. A. K., Mizuta, Hiroshi and Ahmed, H. (2002) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices. At The International Conference of Polycrystalline Semiconductors 2002, Nara, , p 11.

Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D. and Ahmed, H, (2002) Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation. At TRENDS IN NANOTECHNOLOGY 2002, Santiago de Compostela,

Evans, G. and Mizuta, Hiroshi (2002) Negative differential conductance and threshold voltage distribution in two-island single-electron tunnelling structures. At 26th International Conference on the Physics of Semiconductors, Edinburgh, , pp 298.

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T. , Durrani, Z. A. K. , Nakazato, K. and Ahmed, H. (2002) Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors. At The International Conference of Polycrystalline Semiconductors 2002, Nara, , pp 12.

Amakawa, S., Nakazato, K. and Mizuta, Hiroshi (2002) A new approach to failure analysis and yield enhancement of very large-scale integrated systems. At 32th European Solid-State Device Research Conference, Firenze, , pp 147-150.

Furuta, Y., Mizuta, Hiroshi, Kamiya, T., Tan, Y. T. , Nakazato, K., Durrani, Z. A. K. and Taniguchi, K. (2002) Tunnel barrier properties in polycrystalline-Si single-electron transistors”,. At 32th European Solid-State Device Research Conference, Firenze, , pp 399-402.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Taniguchi, K. (2001) Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors. At 2001 International Conference on Solid State Devices and Materials, Tokyo,

Mizuta, Hiroshi, Furuta, Y., Evans, G., Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Ahmed, H. (2001) Local disorder effects on electron transport in silicon nanostructures. At TRENDS IN NANOTECHNOLOGY 2001, Segovia,

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K. and Taniguchi, K. (2001) Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , 44.

Kamiya, T., Tan, Y. T. , Furuta, Y., Mizuta, Hiroshi, Durrani, Z. A. K. and Ahmed, H. (2001) Carrier transport in ultra-thin nano/polycrystalline silicon films and nanowires. At 2001 Spring Meeting of Materials Research Society , pp A16.2.1-A16.2.6.

Amakawa, S., Mizuta, Hiroshi and Nakazato, K. (2001) Analysis of multi-phase clocked electron pump circuits. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , 30.

Nakazato, K., Itoh, K., Ahmed, H., Mizuta, Hiroshi, Kisu, T., Kato, M. and Sakata, T. (2000) Phase-state Low Electron-number Drive Random Access Memory (PLEDM). At IEEE International Solid-State Circuit Conference, San Francisco, , pp 132-133.

Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution. At 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede,

Mizuta, Hiroshi, Williams, D., Katayama, K., Muller, H. -O., Nakazato, K. and Ahmed, H. (1998) High-speed single-electron memory: cell design and architecture. At 2nd Int. WS on Physics and Modeling of Devices Based on Low-Dimensional Structures, Aizu-Wakamatsu, , pp 67-72.

Tsuchiya, Yoshishige, Fujita, H., Sato, D., Endoh, M., Kurosawa, M., Nohira, H., Hattori, T., Mizuta, Hiroshi and Oda, S. (2004) Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm. At 7th China-Japan Symposium on Thin Films, Chengdu Sichuan, , pp 118-121.

Shimada, T., Yamaguchi, S., Ando, M., Nakazato, K., Koshida, N., Takai, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2004) Neosilicon-created new applications. At 7th China-Japan Symposium on Thin Films, Chengdu-Shichuan, , pp 101-104.

Salem, M. A. , Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM. At 16th International Vacuum Congress, Venice,

Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D. and Ahmed, H. (2002) Frequency-dependent permittivity of DNA using molecular dynamics simulation. At 9th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Catania,

Cheong, H. -J., Hippo, D., Tanaka, A., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Visible electroluminescence from size-controlled silicon quantum dots. At Conference on lasers and electro-optics / Quantum electronics and laser science conference, Long Beach, , p 109.

Durrani, Z. A. K., Kamiya, T., Tan, Y. T., Mizuta, Hiroshi, Furuta, Y. and Ahmed, H. (2001) Nanocrystalline silicon point-contact single-electron transistor. At 2001 Silicon Nanoelectronics Workshop, Kyoto, , pp 38.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., Ahmed, H. and Taniguchi, K. (2000) Carrier transport across a few grain boundaries in polycrystalline silicon. At Condensed Matter and Materials Physics 2000, Bristol,

Amakawa, S., Mizuta, Hiroshi and Nakazato, K. (2000) Analysis of multi-clocked electron pump consisting of single-electron transistors. At 4th International Workshop on Quantum Functional Devices, Kanazawa,

Nakazato, K., Itoh, K., Mizuta, Hiroshi and Ahmed, H. (2001) Silicon Stacked Tunnel Transistor PLED and its Applications to DRAM. At FSRC Science and Technology of Silicon Materials, La Jolla,

Mizuta, Hiroshi, Muller, H. -O., Tsukagoshi, K., Williams, D., Nakazato, K., Durrani, Z., Irvine, A., Amakawa, S., Evans, G. and Ahmed, H. (2000) Nanoscale Coulomb blockade memory and logic devices. At TRENDS IN NANOTECHNOLOGY 2000, Toledo,

Pooley, D., Ahmed, H., Mizuta, Hiroshi and Nakazato, K. (2000) Single-electron charging phenomena in silicon nano-pillars with and without silicon nitride barriers. At 2000 International Conference on Solid State Devices and Materials, Sendai,

Amakawa, S., Mizuta, Hiroshi and Nakazato, K. (2000) Performance optimisation of single-electron pump circuits. At 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede,

Wagner, M., Mizuta, Hiroshi and Nakazato, K. (2000) A fast three-dimensional MC simulator for tunneling diodes. At 2000 International Conference on Simulation of Semiconductor Processes and Devices, Seattle, , pp 31-33.

Muller, H. -O., Williams, D. and Mizuta, Hiroshi (2000) Design optimization of Coulomb blockade devices. At 7th International Workshop on Computational Electronics, Glasgow, , pp 73-74.

Boero, M., Vincent, J. K., Inkson, J. C. , Muller, H. -O., Williams, D. and Mizuta, Hiroshi (1999) Simulation of deposition and conductance of granular metallic films. At 2nd Euroconference “Nanoscience for Nanotechnology”, Antwerp,

Pepin, A., Vieu, C., Launois, H., Rosmeulen, M., Rossum, M. van , Muller, H. -O, Williams, D., Mizuta, Hiroshi and Nakazato, K. (1999) Fabrication of MOS-integrated metallic single-electron memories. At Micro and Nano Engineering 1999, Rome,

Boero, M., Muller, H. -O. , Williams, D., Mizuta, Hiroshi and Inkson, J. C. (1999) 1D and 2D metallic granular films: simulation of growth and electrical properties, and yield problems for Coulomb blockade devices. At 4th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Duisberg,

Muller, H. -O., Williams, D. and Mizuta, Hiroshi (1999) Simulation of single electron multiple tunnel junctions in CMOS environment. At 4th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Duisberg,

Mizuta, Hiroshi, Tsukagoshi, K., Nakazato, K. and Ahmed, H. (1999) High-speed single-electron memory and logic. At 9th Workshop on Post-Binary ULSI Systems, Freiburg, , pp 8-9.

Muller, H. -O., Williams, D. and Mizuta, Hiroshi (1999) Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance. At 3rd International Conference on Low Dimensional Structures and Devices, Antalya,

Muller, H. -O. , Boero, M., Williams, D., Mizuta, Hiroshi and Inkson, J. C. (1999) Simulation of deposition and conductance of discontinuous metallic films. At 3rd Workshop of Advanced Research Initiative in Microelectronics on Nano-Scale Integrated Circuits, Marseille,

Nakazato, K., Itoh, K., Mizuta, Hiroshi and Ahmed, H. (1999) A 60nm channel length silicon stacked tunnel transistor. At 57th Device Research Conference, Santa Barbara,

Muller, H. -O., Williams, D., Mizuta, Hiroshi, Irvine, A. C. , Durrani, Z. A. K. and Ahmed, H. (1999) Simulation of Si multiple tunnel junctions. At 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, , 53.

Katayama, K., Mizuta, Hiroshi, Williams, D., Muller, H. -O. and Nakazato, K. (1998) Architecture of lateral single electron memory (L-SEM). At 1st Workshop of Advanced Research Initiative in Microelectronics on Nano-Scale Integrated Circuits, Lille,

Muller, H. -O., Katayama, K., Williams, D. and Mizuta, Hiroshi (1998) Effects of disorder on the blockade voltage of 1D and 2D quantum dot arrays. At 1st Workshop of Advanced Research Initiative in Microelectronics on Nano-Scale Integrated Circuits, Lille,

Mizuta, Hiroshi, Nakazato, K., Piotrowicz, P. J. A., Itoh, K., Teshima, T., Yamaguchi, K. and Shimada, T. (1998) Normally-off PLED (Planar Localised Electron Device) for non-volatile memory. At 1998 Symposium on VLSI Technology, Honolulu, , pp 128-129.

Muller, H. -O., Katayama, K., Williams, D. and Mizuta, Hiroshi (1998) Disorder in 2D quantum dot arrays. At 1998 Phantoms Strategic Domain Meeting, Neuchatel,

Mizuta, Hiroshi, Katayama, K., Muller, H. -O. and Williams, D. (1998) Simulation of high-speed single-electron memory. At 6th International Workshop on Computational Electronics, Osaka, , pp 17-20.

Muller, H. -O, Katayama, K. and Mizuta, Hiroshi (1998) Single electron memory device simulation. At 1998 International Conference on Simulation of Semiconductor Processes and Devices, Leuven,

Nakazato, K., Mizuta, Hiroshi and Ahmed, H. (1998) Recent progress of single electron memory. At The 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, Sapporo,

Mizuta, Hiroshi, Wagner, M., Williams, D. and Ahmed, H. (1997) Design and analysis of a new integrated single-electron memory cell. At Workshop on Fundamental aspects of applications of single electron devices, Lyngby, , pp 29-31.

Mizuta, Hiroshi, Teshima, T., Matsumoto, H., Higuchi, K., Ohkura, Y. and Yamaguchi, K. (1996) A Monte Carlo analysis of new nanoscale ballistic field effect transistors (BFETs) for millimetre-wave applications. At 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, Leeds, , pp 8-13.

Mizuta, Hiroshi (1995) Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states. At 4th International Workshop on Computational Electronics, Tempe, , 13.

Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1993) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. At The 10th International Conference on Electronic Properties of Two-Dimensional Systems, Newport,

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K. (1993) Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems. At Int. Workshop on VLSI Process and Device Modeling, Nara, Nara,

Ho, S., Oohira, M., Kagoya, O., Moriyoshi, A., Mizuta, Hiroshi and Yamaguchi, K. (1993) Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs. At Int. Workshop on VLSI Process and Device Modeling, Nara,

Mizuta, Hiroshi, Goodings, C., Wagner, M. and Ho, S. (1992) Quantum transport in laterally confined resonant tunnelling structures. At Condensed Matter and Material Physics Conference 1992, Sheffield,

Yazawa, Y., Mizuta, Hiroshi, Fukatsu, S., Gossard, A. C. and Shiraki, Y. (1992) Optical properties of electric field controlled lateral superlattices. At 2nd International Symposium on "New Phenomena in Mesoscopic Structures, Kauai,

Wagner, M. and Mizuta, Hiroshi (1992) Effect of LO-phonon scattering on electrical bistability in resonant tunneling diodes. At 1st International Workshop on Quantum Functional Devices, Nasu Heights,

Mizuta, Hiroshi, Wagner, M., Ho, S. and Yamaguchi, K. (1992) Three-dimensioal numerical simulation of multi-mode quantum transport in zero-dimensioanl resonant tunnelling diodes. At 1st International Workshop on Quantum Functional Devices, Nasu Heights,

Ho, S., Mizuta, Hiroshi and Yamaguchi, K. (1991) Effects of reservoirs on tunneling and interference in mesoscopic systems. At Condensed Matter and Material Physics Conference 1991, Birmingham,

Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. At Institute of Physics semiconductor group meeting, Sheffield,

Mizuta, Hiroshi and Goodings, C. J. (1991) Density matrix calculations of femtosecond electron dynamics in resonant tunnelling diodes. At 11th general conference of the condensed matter division of European Physical Society, Exeter,

Goodings, C. J. , Mizuta, Hiroshi, Ochiai, Y., Cleaver, J. R. A. and Ahmed, H. (1990) Fabrication of lateral superlattices on GaAs/AlGaAs heterostructures by gas-assisted focused ion beam etching. At Symposium on Nanostructures: Fabrication and physics, 1990 Fall Meeting of Materials Research Society, Boston,

Tanoue, T. and Mizuta, Hiroshi (1990) Multiple-well RTD with InGaAs strained quantum wells. At Advanced Heterostructure Device Workshop, Hawaii,

Usagawa, T., Rabinzohn, P. D., Mizuta, Hiroshi, Hiruma, K., Kawata, M. and Yamaguchi, K. (1990) Comprehensive analysis of bifunctional 2DEG-HBTs. At 22nd Conference on Solid State Devices and Materials, Sendai, , pp 59-62.

Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1989) Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes. At IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, , pp 274-283.

Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors. At 1989 American Physical Society Meeting

Tanoue, T., Mizuta, Hiroshi and Takahashi, S. (1988) Double negative resistance properties of a triple-well resonant tunneling diode. At Advanced Heterostructure Device Workshop Hawaii, Hawaii,

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. At 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta,

Kusano, C., Tanoue, T., Mizuta, Hiroshi and Takahashi, S. (1988) Multiple-valued logic applications of a triple-well resonant tunneling diode. At Device Research Conference

Yanokura, E., Mizuta, Hiroshi, Mori, M. and Takahashi, S. (1987) GaAs MESFET's fabricated by new self-alignment technology. At 19th Conference on Solid State Devices and Materials, Tokyo, , pp 263-266.

Kotani, A. and Mizuta, Hiroshi (1984) Theory of spin-polarized Auger electron spectra in ferromagnetic materials with particular attention to L23M23M23 Auger spectrum in Fe83B17. Solid State Communications, 51, pp 727-731.

Kotani, A., Mizuta, Hiroshi, Jo, T. and Parlebas, J. C. (1985) Theory of core photoemission spectra in CeO2. Solid State Communications, 53, 805-810.

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. Institute of Physics Conference Series 96, J. Harris eds., 487-490.

Ho, S., Oohira, M., Kagaya, O., Moriyoshi, A., Mizuta, Hiroshi and Yamaguchi, K. (1994) Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs. IEICE Trans. Electron, E77-C, 187-193.

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K. (1994) Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems. IEICE Trans. Electron, E77-C, 155-160.

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science , 305, 363-368.

Kamiya, T., Durrani, Z. A. K., Ahmed, H,, Sameshima, T., Furuta, Y. , Mizuta, Hiroshi and Lloyd, N. (2003) Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices. J. Vac. Sci. Technol., B 21, 1000-1003.

Walker, P. and Mizuta, Hiroshi (2006) Energy-balance modeling of short channel single-GB thin film transistors. Int. J. Computational Science and Engineering , 2, 148-157.

Mizuta, Hiroshi and Tanoue, T. (1995) The Physics and Applications of Resonant Tunnelling Diodes; Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 2, Cambridge University Press (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 2).

Amakawa, S., Tsukagoshi, K. , Nakazato, K., Mizuta, Hiroshi and Alphenaar, B. (2004) Single-electron logic based on multiple-tunnel junctions. In, Mesoscopic Tunneling Devices. , Research Signpost, 71-104.

Durrani, Z.A.K., Kamiya, T. and Mizuta, Hiroshi (2004) Electron Transport in Nanocrystalline Silicon. In, Recent Res. Devel. Applied Phys. 7. , Transworld Research Network, 105-124.

Mizuta, Hiroshi, Nishiguchi, K. and Oda, S. (2006) Ballistic transport in silicon nanostructures. In, Silicon Nanoelectronics. , Taylor & Francis, CRC Press, 105-131.

Kamiya, T., Amakawa, S. and Mizuta, Hiroshi (2005) Single-Electron Devices (in Japanese). In, Experimental Chemistry Series Vol.28: Chemistry for Nanotechnology. , Maruzen Press, 212-250.

Huang, S., Mizuta, Hiroshi and Oda, S. (2006) Nanocrystalline Silicon Memory Devices. In, Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 1. , American Scientific Publishers, 1-64.

Mizuta, Hiroshi, Oda, S., Uno, S., Mori, N. and Koshida, N. (2008) Electron transport in nanocrystalline silicon. In, Device Applications of Silicon Nanocrystals and Nanostructures. , Springer-Verlag.

Nakazato, K. and Mizuta, Hiroshi (2000) Single-Electron Logic Devices. FED Journal, 11, (4), 39-42.

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y.T., Kamiya, T., Durrani, Z.A.K., Ahmed, H. and Taniguchi, K. (2001) Carrier transport across a few grain boundaries in polycrystalline silicon. CREST FEMD News Letter, 2, (4), 5-6.

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y.T., Durrani, Z.A.K., Uno, S. and Nakazato, K. (2002) Control of grains and grain coundaries in nano/plycrystalline silicon for single-electron device applications. CREST FEMD News Letter, 4, (3), 5-6.

Kalafalla, M.A.H., Mizuta, Hiroshi and Durrani, Z.A.K. (2003) Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistor. CREST FEMD News Letter, 5, (3), 5-6.

Salem, M.A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM. CREST FEMD News Letter, 5, (4)

Shimada, T., Ando, M., Yamaguchi, S., Momo, N., Takai, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2004) Nano-electro-mechanical device application of neosilicon. CREST FEMD New Letter, 6, (1), 1-2.

Tsuchiya, Yoshishige, Takai, K., Momo, N., Nagami, T., Mizuta, Hiroshi and Oda, S. (2004) Studies of high-speed non-volatile nanoelectro-mechanical systems memory device using “neosilicon. CREST FEMD News Letter, 6, (2), 1-2.

Uno, S., Nakazato, K., Koshida, N., Mizuta, Hiroshi and Oda, S. (2004) Electrons, Phonons, and Electron-Phonon Interactions in Neosilicon. CREST FEMD News Letter, 6, (3)

Oda, S. and Mizuta, Hiroshi (2005) NeoSilicon and its device applications. IUMRS Facets, 4, 1-5.

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) High-density assembly of nanocrystalline silicon quantum dots. CREST FEMD News Letter, 6, (4), 1-2.

Zhou, X., Usami, K., Rafiq, M.A., Mizuta, Hiroshi and Oda, S. (2008) Size effects on hopping conduction in Si nanocrystals. At 29th International Conference on the Physics of Semiconductors (ICPS-29), Rio de Janeiro,

Li, C.B., Usami, K., Muraki, T., Mizuta, Hiroshi and Oda, S. (2008) The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate. Applied Physics Letters, 93, (4), 041917. (doi:10.1063/1.2968201).

Mizuta, Hiroshi (2002) Hitachi-Cambridge collaboration on nanoelectronics and recent progress on Coulomb blockade devices (Invited Talk). At JAPAN-UK 10+10 Meeting: Semiconductor, Nanostructures & Devices, Stamford,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk). At 4th TUAT-ECU Joint Symposium on Coherent Photonic Science and Nano Advanced Materials, Tokyo,

Zhou, X., Usami, K., Rafiq, M.A., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Influence of nanocrystal size on the transport properties of Si nanocrystals. J. Appl. Phys., 104, 024518.

Kawata, Y., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout. IEEE Transactions on Nanotechnology, 7, (4)

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. At 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh,

Kawata, Y, Oda, S, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Detection of Single-Charge Polarisation in Silicon Double Quantum Dots by Using Serially-Connected Multiple Single-Electron Transistors. At 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh,

Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Suspended gate silicon nanodot memory. At ESSDERC/CIRC Fringe (ESS-Fringe), Edinburgh,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2008) Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk). At 7th International Conference on Global Research and Education – Inter-Academia, Pecs,

Inaba, N, Nakamine, Y, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Pereira, R, Stegner, A, Stutzmann, M and Oda, S (2008) Phosphorous-doping in silicon nanocrystals. At 34th International Conference on Micro and Nano Engineering (MNE 2008), Athens,

Li, C.B, Usami, K, Mizuta, Hiroshi, Uchida, K and Oda, S (2008) VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate. At 40th International Conference on Solid State Devices and Materials (SSDM2008)

Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi (2008) Silicon radio frequency single-electron transistors operating at above 4.2 K. At 40th International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba,

Manoharan, M., Oda, S. and Mizuta, Hiroshi (2008) Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors. Applied Physics Letters, 93, (11), 112107. (doi:10.1063/1.2980028).

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N and Oda, S (2008) Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization. Japanese Journal of Applied Physics, 47, 7398-7402.

Mizuta, Hiroshi (2002) Hitachi-Cambridge collaboration on nanoelectronics and recent progress on Coulomb blockade devices (Invited Talk). At JAPAN-UK 10+10 Meeting: Semiconductor, Nanostructures & Devices, Stamford,

Mizuta, Hiroshi (1999) Single- and few-electron memories (Invited Talk). At 12th Japanese-German Information Technology Forum, Dresden,

Cheong, H.J, Tanaka, A, Hippo, D, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S (2008) Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals. Japanese Journal of Applied Physics, 47, 8137-8140.

Mizuta, Hiroshi, Nagami, T, Ogi, Jun, Pruvost, B, Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, S (2008) Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk). At 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing,

Pruvost, B, Mizuta, Hiroshi and Oda, S (2008) Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate energy states. Journal of Applied Physics, 103, 054508.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2008) Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk). At 5th International Symposium on Nanvision Science / 10th Takayanagi Kenjiro Memorial Symposium, Hamamatsu,

Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi (2008) Silicone -on-insulator-based radio-frequency single-electron transistors operating at temperatures above 4.2 K. Nano Letters, 8, (12), 4648-4652. (doi:10.1021/nl801992j).

Mizuta, Hiroshi, Oda, S, Uno, S, Mori, N and Koshida, N (2008) Electron transport in nanocrystalline silicon. In, Device Applications of Silicon Nanocrystals and Nanostructures (Nanostructure Science and Technology). , Springer, 197-222.

Pruvost, Benjamin, Uchida, Ken, Mizuta, Hiroshi and Oda, Shunri (2009) Design optimization of NEMS switches for suspended-gate single-electron transistor applications. IEEE Transactions on Nanotechnology, 8, (2), 174-184.

Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2009) Study of single-electron transport via suspended double silicon quantum dots. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.

Zhou, X, Uchida, K, Mizuta, Hiroshi and Oda, S (2009) Lateral conduction of Si nanocrystals by thin film transistor structures. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.

Zhou, X, Uchida, K, Mizuta, Hiroshi and Oda, S (2009) Current oscillations observed for sparse Si nanocrystal thin films. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.

Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi and Koshida, N (2009) Quasi-ballistic electron transport through silicon nanocrystals. At 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Edison 16), Montpellier, 24 - 28 Aug 2009.

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K. and Oda, S. (2009) Electron transport through silicon serial triple quantum dots. Solid State Electronics, 53, 779-785. (doi:10.1016/j.sse.2009.03.009).

Akhtar, S, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S (2008) Size-Dependent Structural Characterization of Silicon Nanowires. Japanese Journal of Applied Physics, 47, (6), 5033-5036.

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S (2005) High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots. In, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,. , American Institute of physics, 1589-1590.

Li, C., Usami, K., Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2009) Position-controllable Ge nanowires growth on patterned Au catalyst substrate. Applied Physics Express, 2, 015004. (doi:10.1143/APEX.2.015004).

Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Suspended Gate Silicon Nanodots memory. At ESSDERC/CIRC Fringe (ESS-Fringe), Edinburgh, ESSDERC, p19.

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N and Oda, S (2009) Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method. Materials Chemistry and Physics, 116, 107-111.

Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, Mizuta, Hiroshi and Oda, S (2006) Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode. At 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan, 08 - 10 Nov 2006.

Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin , Garcia Ramirez, Mario, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, Shunri (2008) Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing. At 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing,

Mizuta, Hiroshi, Ramirez, M. A. G, Hassani, F. A, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Nagami, T, Pruvost, B, Ogi, Jun, Sawai, S and Oda, S (2009) Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices. At 8th Internationa Conference on Global Research and Education Inter-Academia 2009

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K and Oda, S (2009) NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications (Invited Talk). At IEEE NANO Satellite Workshop on Emerging Nonvolatile Memories, Genova,

Mizuta, Hiroshi (2009) Co-integration of Silicon Nanoelectronic Devices and NEMS for ‘More-than-Moore’ Functional Systems (Invited Talk). At International Workshop on Future Nanosilicon Technology, Tokyo,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2009) Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures. At JSAP Symposium on Development of Neosilicon for 'More-than'Moore' Era, Toyama,

Hassani, F.A, Cobianu, C, Armini, S, Petrescu, V, Merken, P, Tsamados, D, Ionescu, A.M, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection. At 41st International Conference on Solid State Devices and Materials (SSDM2009), Sendai,

Yoshimura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Koshida, N (2009) Evidence of carrier accumulation effects on the response enhancement in thin-film electrochromic devices. At 41st International Conference on Solid State Devices and Materials (SSDM2009), Sendai,

Ramirez, M.A.G, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell. At 35th International Conference on Micro and Nano Engineering (MNE2009), Ghent,

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K and Oda, S (2009) NEM-MOS Co-integration for Fast & Nonvolatile Memory Applications. UNSPECIFIED

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Nagami, T,, Pruvost, B., Ogi, J., Sawai, S., Oda, S. and Okamoto, M. (2009) Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices. At 8th International Conference on Global Research and Education Inter-Academia 2009

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Hybrid Circuit Analysis of a Suspended Gate Silicon Nanodot Memory (SGSNM) cell. At 35th International Conference on Micro and Nano Engineering (MNE2009), Ghent, Belgium,

Pruvost, B, Uchida, K, Mizuta, Hiroshi and Oda, S (2009) Design of New Logic Architectures Utilizing Optimized Suspended-Gate Single-Electron Transistors. IEEE Transactions on Nanotechnology

Li, C, Usami, K, Mizuta, Hiroshi and Oda, S (2009) Vapor-solid-solid radial growth of Ge nanowires. Journal of Applied Physics, 106, 046102.

Yamahata, G, Kodera, T, Mizuta, Hiroshi, Uchida, K and Oda, S (2009) Control of Inter-dot Electrostatic Coupling in an Asymmetric Silicon Double Quantum Dot Operating at 4.5 K. Applied Physics Express, 2, 095002.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Sawai, S, Oda, S and Okamoto, M (2009) Multi-scale Simulation of Hybrid Silicon Nanoelectromechanical (NEM) Information Systems. Journal of Automation, Mobile Robotics & Intelligent Systems

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi and Koshida, N (2009) Quasi-ballistic Electron Transport through Silicon Nanocrystals. J. Phys.: Conf. Series

Arab Hassani, Faezeh , Cobianu, Cornel, Armini, Silvia, Petrescu, Violeta, Merken, Patrick, Tsamados, Dimitrios, M. Ionescu, Adrian, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection. In, 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai-, Japan, 07 - 09 Oct 2009.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2009) Electron-phonon interaction in suspended Si double quantum dots. At 22nd Int. Microprocess and Nanotechnology Conference (MNC 2009), Sapporo,

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Hybrid Circuit Analysis of a Suspended Gate Silicon Nanodot Memory (SGSNM) cell. Microelectronic Engineering, 87, 1284-1286.

Yamahata, G, Kodera, T, Mizuta, H, Uchida, K and Oda, S (2009) Control of Inter-dot Electrostatic Coupling in an Asymmetric Silicon Double Quantum Dot Operating at 4.5 K. Applied Physics Express, 2, 095002.

Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory. Jpn. J. Appl. Phys., 48, 114502.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories. At International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, University of Southampton,

Pruvost, B, Mizuta, H and Oda, S (2008) Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states. JOURNAL OF APPLIED PHYSICS, 103, -.

Li, C.B., Usami, K., Mizuta, H. and Oda, S. (2008) Controlled Ge nanowires growth on patterned Au catalyst substrate. 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), 2 pp.-.

Manoharan, M, Kawata, Y, Tsuchiya, Y, Oda, S and Mizuta, H (2008) Strongly coupled multiple-dot characteristics in dual recess structured silicon channel. JOURNAL OF APPLIED PHYSICS, 103, -.

Tanaka, A, Tsuchiya, Y, Usami, K, Saito, S, Arai, T, Mizuta, H and Oda, S (2008) Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique. JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 3731-3734.

Manoharan, M, Tsuchiya, Y, Oda, S and Mizuta, H (2008) Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K. NANO LETTERS, 8, 4648-4652.

Rafiq, MA, Durrani, ZAK, Mizuta, H, Hassan, MM and Oda, S (2008) Field-dependant hopping conduction in silicon nanocrystal films. JOURNAL OF APPLIED PHYSICS, 104, -.

Rafiq, M.A., Mizuta, H. and Oda, S. (2008) P-type Si nanocrystal thin-film transistor. 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), 2 pp.-.

Manoharan, M., Tsuchiya, Y., Oda, S. and Mizuta, H. (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), 2 pp.-.

Zhou, X, Uchida, K, Mizuta, H and Oda, S (2009) Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films. JOURNAL OF APPLIED PHYSICS, 105, -.

Zhou, X, Uchida, K, Mizuta, H and Oda, S (2009) Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. JOURNAL OF APPLIED PHYSICS, 106, -.

Yamahata, G, Kodera, T, Mizuta, H, Uchida, K and Oda, S (2009) Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K. APPLIED PHYSICS EXPRESS, 2, -.

Cobianu, C., Serban, B., Mihaila, M., Dumitru, V., Hassani, F.A., Tsuchiya, Y., Mizuta, H., Cherman, V., De Wolf, I., Petrescu, V., Santana, J., Dupre, C., Ollier, E., Ernst, T., Andreucci, P., Duraffourg, L., Tsamados, D. and Ionescu, A.M. (2009) Nano-scale resonant sensors for gas and bio detection: expectations and challenges. Proceedings of the 2009 32nd International Semiconductor Conference. CAS 2009, 259-62.

Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory. JAPANESE JOURNAL OF APPLIED PHYSICS, 48, -.

Ogi, Jun, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Uchida, K, Oda, S and Mizuta, Hiroshi (2010) Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation. Jpn. J. Appl. Phys., 49, 044001.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots. Jpn. J. Appl. Phys., 49, 045203.

Nagami, T, Tsuchiya, Yoshishige, Uchida, K, Mizuta, Hiroshi and Oda, S (2010) Scaling Analysis of Nanoelectromechanical Memory Devices. Jpn. J. Appl. Phys., 49, 044304.

Pruvost, B, Uchida, K, Mizuta, Hiroshi and Oda, S (2010) Design of New Logic Architectures Utilizing Suspended-gate Single-Electron Transistors. IEEE Transaction on Nanotechnology

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots. At QDCAM2010, Cambridge,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2010) Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications (Invited Talk). At UK-Japan Workshop on Novel Phenomena and Techniques in Semiconductor Nanostructures, Tokyo,

Boden, S A, Moktadir, Zakaria, Bagnall, Darren, Mizuta, Hiroshi and Rutt, Harvey (2010) Focused Helium Ion Beam Milling and Deposition. At 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, 19 - 22 Sep 2010.

Li, C.B. , Yamahata, G, Xia, J.S., Mizuta, Hiroshi, Oda, S and Shiraki, Y (2010) Vertical-coupled SiGe double quantum dots. IEE Electronics Letters, 46, 940-941.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots. At IEEE Silicon Nanoelectronics Workshop, Honolulu,

Migliore, Maurizio, Moktadir, Zakaria and Mizuta, Hiroshi (2010) An ultrasensitive vibrating channel mass sensor based on tunnelling current. At 2nd WSEAS International Conference on Nanotechnology, Cambridge,

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2010) Hybrid Silicon Nanotechnologies for Advanced Information Processing and Sensing (Invited Talk). At International Symposium on Micro-Nano Multi-Functional Devices, Kawasaki,

Moktadir, Zakaria, Boden, Stuart, Mizuta, Hiroshi and Rutt, Harvey (2010) Graphene for Nano-Electro-Mechanical Systems. At 21st Micromechanics and Micro Systems Europe Workshop (MME2010), Enschede, The , Netherlands, 26 - 29 Sep 2010.

Mizuta, Hiroshi, Ogi, Jun, Tsuchiya, Yoshishige and Oda, S (2010) Scaled Silicon Nanoelectromechanical Functional Systems (Keynote Lecture). At 7th International Workshop on Functional and Nanostructured Materials FNMA'10, 16 - 20 Jul 2010.

Mizuta, Hiroshi and Tsuchiya, Yoshishige (2010) NEMS and nanodevices (in Japanese). In, Developing Nanosilicon Technology and Device Applications. , CMC Publishing, 108-121.

Ghiass, Mohammad Adel, Armini, Silvia, Carli, Marta, Maestre Caro, Arantxa, Cherman, Vladimir, Ogi, Jun, Oda, Shunri, Moktadir, Zakaria, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors. At 36th International Conference on Micro-and Nano-Engineering (MNE) 2010 , Genoa, Italy, 19 - 22 Sep 2010.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Kalhor, Nima, Moktadir, Zakaria, Tsuchiya, Yoshishige, Sawai, S, Ogi, Jun and Oda, S (2010) Scaled Silicon Nanoelectromechanical (NEM) Hybrid Systems. At International Conference on Solid-State and Integrated Circuit Technology (Invited Talk), Shanghai, China, 01 - 04 Nov 2010.

Boden, Stuart, Moktadir, Zakaria, Bagnall, Darren, Mizuta, Hiroshi and Rutt, Harvey (2011) Focused helium ion beam milling and deposition. Microelectronic Engineering, 88, (8), 2452-2455. (doi:10.1016/j.mee.2010.11.041).

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Silicon Nanostructures for Extremely Sensitive Chemical and Biomolecular Detection. At The 3rd ITP International Symposium, Southampton,

Hanafusa, H., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Chong, Harold, Mizuta, Hiroshi and Suda, Y. (2011) Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy. Applied Physics Express, 4, 025701. (doi:10.1143/APEX.4.025701).

Hanafusa, H, Hirose, N, Kasamatsu, A, Miura, T, Matsui, T, Chong, Harold, Mizuta, Hiroshi and Suda, Y (2011) Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers. Applied Physics Express, 4, 024102-1-024102-3.

Moktadir, Zakaria, Boden, Stuart, Ghiass, Mohammad Adel, Rutt, Harvey and Mizuta, Hiroshi (2011) U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio. Electronics Letters, 47, (3)

Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2011) Theory of quasiballistic transport through nanocrystalline silicon dots. Applied Physics Letters, 98, 062104.

Moktadir, Zakaria, Boden, Stuart, Ghiass, Mohammad Adel, Rutt, Harvey, Mizuta, Hiroshi, Miyazaki, H, Li, S-L and Tsukagoshi, K (2011) A graphene bilayer channel transistor with a very high Ion/Ioff ratio, graphene single electron devices and graphene nano-mechanical structures for NEMS. At UK-Japan Workshop on Graphene, Lancaster, 03 - 04 Feb 2011.

Ghiass, Mohammad Adel, Armini, Silvia, Carli, Marta, Maestre Caro, Arantxa, Cherman, Vladimir, Ogi, Jun, Oda, Shunri, Moktadir, Zakaria, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors. Microelectronic Engineering, 88, (8), 1753-1756.

Arab Hassani, Feazeh , Cobianu, Cornel , Armini, Silvia , Petrescu, Violeta , Merken, Patrick , Tsamados, Dimitrios , Mihai Ionescu, Adrian , Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Numerical Analysis of Zeptogram/Hz-Level Mass Responsivity for In-Plane Resonant Nano-Electro-Mechanical Sensors. Microelectronic Engineering

Cobianu, C, Serban, B, Petrescu, V, Pettine, J, Karabacak, D, Offerman, P, Brongesma, S, Cherman, V, Armini, S, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Dupre, C, Duraffourg, L, Koumela, A, Mercier, D, Ollier, E, Tsamados, D and Ionescu, A (2010) Towards nanoscale resonant gas sensors. Annals of the Academy of Romanian Scientists Series of Science and Technology of Information, 3, 39-60.

Boden, Stuart, Moktadir, Zakaria, Bagnall, Darren, Rutt, Harvey and Mizuta, Hiroshi (2011) Beam-induced damage to graphene in the helium ion microscope. In, Graphene 2011 Conference, Bilbao, Spain, 11 - 14 Apr 2011.

Moktadir, Zac, Charlton, Martin , Pollard, Michael, Mizuta, Hiroshi and Rutt, Harvey (2011) Tunable transmission in a graphene photonic crystal in mid-infrared. In, Graphene 2011 Conference, Bilbao, Spain, 11 - 14 Apr 2011.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Hybrid Numerical Analysis of a high-speed non-volatile Suspended Gate Silicon Nanodot Memory. Journal of Computational Electronics, 10, (1), 248-257. (doi:10.1007/s10825-011-0361-z).

Li, C, Mizuta, Hiroshi and Oda, S (2011) Growth and characterisation of Ge Nanowires by chemical vapour deposition. In, Nanowires - Implementations and Applications. , InTech, 487-508.

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi and Koshida, N (2011) Impact ionization and avalanche multiplication in a silicon nanodot array. At 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON17), Santa Barbara,

Mori, N., Minari, H., Uno, S., Mizuta, Hiroshi and Koshida, N. (2011) Strain effects on avalanche multiplication in a silicon nanodot array. At 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, JP, 28 - 30 Sep 2011.

Mizuta, Hiroshi, Husain, Muhammad, Alkhalil, Feras, Lin, Yun, Moktadir, Zakaria, Boden, Stuart, Tsuchiya, Yoshishige, Lambert, Nick, Ferguson, Andrew and Chong, Harold (2011) Silicon nanofabrication for QIP in Southampton (Invited Talk). At UK Silicon QIP Meeting, Cambridge,

Husain, Muhammad, Lin, Yun, Alkhalil, Feras, Chong, Harold, Tsuchiya, Yoshishige, Lambert, Nicholas, Ferguson, Andrew and Mizuta, Hiroshi (2011) Fabrication of Silicon-based single spin quantum devices using Hydrogen silsesquioxane electron beam resist. At The 37th International Conference on Micro and Nano Engineering, Berlin, Germany, 19 - 23 Sep 2011.

Lin, Y. P., Husain, M. K., Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J. and Mizuta, H. (2011) Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots. At Quantum information processing and communication international conference at eth Zurich, Zurich, 05 - 09 Sep 2011. quantum information processing and communication international conference at eth zurich, 112-112.

Mizuta, Hiroshi (2011) Downscaled Nanoelectromechanical (NEM) Hybrid Systems (Invited Talk). At UCL/MAPS-JAIST/SMS Worshop 2011

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi and Koshida, N (2011) Impact ionization and avalanche multiplication in a silicon nanodot array. At 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON17), Santa Barbara,

Moraru, D, Kuzuya, Y, Mizuno, T, Tabe, M and Mizuta, Hiroshi (2011) Ab initio simulation of single dopant devices: electronic states and transport. At 2011 Autumn JSAP symposium 'Deterministic doping and single dopant devices for extended CMOS', Yamagata,

Alkhalil, F. M., Husain, M. K., Lin, Y. P., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2011) Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator. At Quantum information processing and communication international conference at ETH Zurich, Zurich, 05 - 09 Sep 2011.

Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2010) Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator. At ESSDERC , Sevilla, Spain,

Svetovoy, V, Moktadir, Zakaria, Elwenspoek, M and Mizuta, Hiroshi (2011) Tailoring the thermal Casimir force with graphene. Europhysics letters (EPL), 96, (1), 14006-p1.

Mizuta, Hiroshi, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Armini, S, Delande, T, Loyo Prado, J, Cherman, V, Dupre, C and Ollier, E (2011) Silicon nanowires for advanced sensing: Electrical and electromechanical characteristics and functionalisation technology. At G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND), Tokyo, 04 - 05 Oct 2011.

Cuong, N.T., Mizuta, Hiroshi, Otsuka, N and Chi, D.H. (2011) Ab-initio calculations of electronic properties and quantum transport in U-shaped grapheme nanoribbons. At 6th conference of the Asian Consortium on Computational Materials Science (ACCMS-6),

Deepak, S, Mizuta, Hiroshi and Manoharan, M (2011) Transport characteristics of nanoconstricted grapheme with and without point defects. At The International Conference on Nano Science, Engineering and Technology (ICONSET2011), Sathyabama,

Schmidt, Marek E., Johari, Z., Ismail, R., Mizuta, Hiroshi and Chong, H.M.H. (2011) Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications. At Micro and Nano Engineering , Berlin, Germany, 19 - 23 Sep 2011.

Mizuta, Hiroshi, Kuzuya, Y, Moraru, D, Mizuno, T and Tabe, M (2011) Single dopant simulation : DOS and carrier transport (Invited Talk). At Italy-Japan Workshonp on Single Atom Control for Future Nanoelectronics, Tokyo,

Schmidt, Marek E., Xu, Cigang, Cooke, Mike, Mizuta, Hiroshi and Chong, H.M.H. (2012) Large area plasma-enhanced chemical vapor deposition of nanocrystalline graphite on insulator for electronic device application. At Graphene 2012, Brussels, BE, 10 - 13 Apr 2012.

Alkhalil, Feras, Chong, Harold, Tsuchiya, Yoshishige, Ferguson, Andrew and Mizuta, Hiroshi (2010) Silicon-based integrated single spin quantum information technology [SISSQIT]. At International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' and 'Beyond CMOS' Era, Southampton, GB, 01 - 02 Mar 2010.

Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2012) Strain effects on avalanche multiplication in a silicon nanodot array. [in special issue: Solid State Devices and Materials II] Japanese Journal of Applied Physics, 51, 04DJ01-[5pp]. (doi:10.1143/JJAP.51.04DJ01).

Rafiq, Muhammad A., Masubuchi, Katsunori, Durrani, Zahid A.K., Colli, Alan, Mizuta, Hiroshi, Milne, William I. and Oda, Shunri (2012) Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature. Japanese Journal of Applied Physics, 51, (2), 025202-[6pp]. (doi:10.1143/JJAP.51.025202).

Rafiq, M.A., Masubuchi, K., Durrani, Z.A.K., Colli, A., Mizuta, H., Milne, W.I. and Oda, S. (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors. Applied Physics Letters, 100, (11), 113108-[4pp]. (doi:10.1063/1.3694046).

Mizuta, Hiroshi, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Garcia Ramirez, Mario Alberto, Kalhor, Nima, Moktadir, Zakaria, Ogi, J. and Tsuchiya, Yoshishige (2012) NEMS-MOS and NEMS-SET hybrid functional systems for advanced information processing and extreme sensing. 2012 Energy Material Nanotechnology Meeting, Orlando, US, 16 - 20 Apr 2012.

Armini, Silvia, Cherman, Vladimir, Volodin, Alexander, Lenci, Silvia, Pieri, Francesco, Wouters, Daan, Moonens, Joos, Neutens, Pieter, Dupré, Cecilia, Ollier, Eric, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2012) Selective surface functionalization of Si and poly-SiGe resonators for a monolithic integration of bio- and gas sensors with CMOS. At Materials Research Society Spring Meeting 2012, San Francisco, US, 09 - 13 Apr 2012.

Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H , Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates. In, 12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, GB, 20 - 23 Aug 2012. 2pp. (doi:10.1109/NANO.2012.6321993).

Lin, Y.P., Perez-Barraza, J.I., Husain, M.K., Alkhalil, F.M., Lambert, N., Chong, H.M.H., Fersuon, A.J., Williams, D.A. and Mizuta, H. (2012) VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots. In, 12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, GB, 20 - 23 Aug 2012. 2pp.

Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams , D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi (2012) Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology. At 38th International Conference on Micro and Nano Engineering, 16 - 20 Sep 2012. 1pp.

Lin, Y. P., Husain, M. K. and Alkhalil, F. M. et al. (2012) Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process. [in special issue: MNE2011] Microelectronics Engineering, 98, (386-390), 386-390. (doi:10.1016/j.mee.2012.07.011).

Schmidt, Marek E., Johari, Zaharah, Ismail, Razali, Mizuta, Hiroshi and Chong, Harold M H (2012) Focused Ion Beam Milling of Exfoliated Graphene for Prototyping of Electronic Devices. Microelectronic Engineering

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Arab Hassani, Faezeh, Dupre, Cécilia, Cherman, Vladimir, Armini, Silvia, Bartsch, Sebastian, Tsamados, Dimitrios and Mizuta, Hiroshi (2012) Double-Gate Suspended Silicon Nanowire Transistors with Tunable Threshold Voltage for Chemical/Biological Sensing Applications. IEEE NANO 2012, 12th International Conference on Nanotechnology, Birmingham, UK, 20-23 Aug 2012,

Alkhalil, Feras, Perez-Barraza, J.I., Husain, M.K. , Lin, Y.P., Lambert, N., Chong, H.M.H. , Tsuchiya, Y., Williams, D.A. , Ferguson, A.J. and Mizuta, H. (2012) Realization of Al FinFET single electron turnstile co-integrated with a close proximity electrometer SET. In, 38th International Conference on Micro and Nano Engineering (MNE 2012), Toulouse, FR, 16 - 20 Sep 2012.

Alkhalil, Feras, Perez-Barraza, J., Husain, M. K., Lin, Y., Lambert, N., Chong, H M H , Tsuchiya, Y, Williams, D., Ferguson, A. and Mizuta, H. (2012) Al FinFET single electron devices with close proximity Si plunger gates. At Silicon Quantum Information Processing Meeting, Warwick, GB, 14 Sep 2012. 1pp.

Alkhalil, Feras, Perez-Barraza , J., Husain, M. K., Lin, Y., Lambert, N., Chong, H M H , Tsuchiya, Y., Williams, D., Ferguson, A., Saito, Shinichi and Mizuta, H. (2012) Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET. [in special issue: NanoDevices and NanoSystems] Microelectronic Engineering

Moktadir, Zakaria and Mizuta, Hiroshi (2013) Magnetoresistance in inhomogeneous graphene/metal hybrids. Journal of Applied Physics, 113, 083907-[6pp]. (doi:10.1063/1.4793647).

Hang, Shuojin, Moktadir, Zakaria and Mizuta, Hiroshi (2013) Ultra-fine graphene nanoelectronic devices carved with tightly focused helium ion beam. At The 7th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices ( Graphene Week 2013), Chemnitz, DE, 02 - 07 Jun 2013.

Alkhalil, Feras M., Perez-Barraza, Julia I., Husain, Muhammad K., Lin, Yun P., Lambert, Nick, Chong, Harold M.H., Tsuchiya, Yoshishige, Williams, David A., Ferguson, Andrew J., Saito, Shinichi and Mizuta, Hiroshi (2013) Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET. Microelectronic Engineering, 111, 64-67. (doi:10.1016/j.mee.2013.02.007).

Hang, Shuojin, Moktadir, Zakaria, Kalhor, Nima and Mizuta, Hiroshi (2013) Direct helium ion milling technology: towards the fabrication of extremely down-scaled graphene nanodevices. At The 2013 Silicon Nanoelectronics Workshop (SNW), Kyoto, JP,

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Extremely sensitive conduction-based chemical/biosensors using suspended silicon nanostructures. At 2010 Annual Showcase: Nanotechnology for Healthcare, Southampton, GB,

Garcia Ramirez, Mario Alberto, Ghiass, Mohammad Adel, Moktadir, Z, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2014) Fabrication and characterisation of a double-clamped beam structure as a control gate for a high-speed non-volatile memory device. Microelectronic Engineering, 114, 22-25. (doi:10.1016/j.mee.2013.09.002).

Hang, Shuojin, Moktadir, Zakaria and Mizuta, Hiroshi (2014) Raman study of damage extent in graphene nanostructures carved by high energy Helium ion beam. Carbon, 1-25. (doi:10.1016/j.carbon.2014.01.071).

Schmidt, Marek E., Xu, Cigang, Cooke, Mike, Mizuta, Hiroshi and Chong, Harold M.H. (2014) Metal-free plasma-enhanced chemical vapour deposition of large area nanocrystalline graphene. Materials Research Express, 1, (2), 1-10. (doi:10.1088/2053-1591/1/2/025031).

Hang, Shuojin, Moktadir, Zakaria and Mizuta, Hiroshi (2014) Irradiation induced tunnel barrier in graphene. At 9th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2014), Gothenburg , 23 - 27 Jun 2014.

Hang, Shuojin, Moktadir, Zakaria and Mizuta, Hiroshi (2014) Irradiation induced tunnel barrier in side-gated graphene nanoribbon. At 2014 IEEE Silicon Nanoelectronics Workshop, Honolulu, US, 08 - 09 Jun 2014.

Boodhoo, L., Crudgington, L., Chong, H.M.H, Tsuchiya, Y., Moktadir, Z., Hasegawa, T. and Mizuta, H. (2014) Fabrication and characterization of suspended oxidised silicon nanowire channels for near zero leakage logic switches. In, 40th Conference on Micro and Nano Engineering, Lausanne, CH, 22 - 26 Sep 2014.

Kalhor, Nima, Boden, Stuart A. and Mizuta, Hiroshi (2014) Sub-10nm patterning by focused He-ion beam milling for fabrication of downscaled graphene nano devices. Microelectronic Engineering, 114, 70-77. (doi:10.1016/j.mee.2013.09.018).

Mizuta, Hiroshi, Moktadir, Zakaria, Boden, Stuart A., Kalhor, Nima, Hang, Shuojin, Schmidt, Marek E., Cuong, Nguyen Tien, Chi, Dam Hieu, Otsuka, Nobuo, Muruganathan, Manoharan, Tsuchiya, Yoshishige, Chong, Harold, Rutt, Harvey N. and Bagnall, Darren M. (2012) Fabrication and ab initio study of downscaled graphene nanoelectronic devices. In, Pribat, Didier, Lee, Young-Hee and Razeghi, Manijeh (eds.) Carbon Nanotubes, Graphene, and Associated Devices V. Bellingham, US, SPIE, 846206. (Proceedings of SPIE, 8462). (doi:10.1117/12.956439).

Boodhoo, L., Cruddington, L., Chong, Harold M.H., Tsuchiya, Yoshishige, Moktadir, Zakaria, Hasegawa, T. and Mizuta, Hiroshi (2015) Fabrication and characterisation of suspended narrow silicon nanowire channel for low-power nano-electro-mechanical (NEM) switch applications. Microelectronic Engineering, 145, 66-70. (doi:10.1016/j.mee.2015.02.047).

Moktadir, Zakaria, Hang, Shuojin and Mizuta, Hiroshi (2015) Defect-induced Fermi level pinning and suppression of ambipolar behaviour in graphene. Carbon, 1-20. (doi:10.1016/j.carbon.2015.05.049).

Sun, Jian, Schmidt, Marek E., Muruganathan, Manoharan, Chong, Harold and Mizuta, Hiroshi (2016) Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates. Nanoscale, 1-7. (doi:10.1039/C6NR00253F).

Iwasaki, Takuya, Zelai, Taharh, Ye, Sheng, Tsuchiya, Yoshishige, Chong, Harold and Mizuta, Hiroshi (2016) Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy. Carbon (Ref: CARBON-D-16-02315 (doi to follow)).

Contact

Telephone: +442380592852

Email: hm2@ecs.soton.ac.uk

Additional contact details

Mizuta Laboratory, School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahi-dai, Nomi, Ishikawa 923-1292, Japan  TEL: +81 (0)761 51 1571  FAX: +81 (0)761 51 1149  email: mizuta@jaist.ac.jp  http://www.jaist.ac.jp/ms/english/labo/mizuta.html

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