Number of items: 269.
2012
Uchino, T., Gili, E., Tan, L, Buiu, O, Hall, S and Ashburn, P. (2012) Improved vertical MOSFET performance using an epitaxial channel and stacked silicon-insulator structure. Semiconductor Science and Technology, 27, (6), . (doi:10.1088/0268-1242/27/6/062002)
Al Hakim, Mohammad M., Lombardini, Marta, Sun, Kai, Giustiniano, Francesco, Roach, Peter L., Davies, Donna E., Howarth, Peter H., de Planque, Maurits R.R., Morgan, Hywel and Ashburn, Peter (2012) Thin film polycrystalline silicon nanowire biosensors. Nano Letters, . (doi:10.1021/nl2042276) (PMID:22432636)
Sun, Kai, Hakim, M.M.A. and Ashburn, P (2012) Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization. Electrochemical and Solid-State Letters, 15, (3), . (doi:10.1149/2.011203esl)
Mohamed Sultan, Suhana, Sun, Kai, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Partridge, J., Allen, M. W., Ashburn, Peter and Chong, Harold (2012) Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD. IEEE Electron Device Letters, 33, (2), .
2011
Lombardini, Marta, Al Hakim, Mohammad, Sun, Kai, Broder, Graham, Giustiniano, Francesco, de Planque, Maurits R.R., Roach, Peter, Davies, D.E., Howarth, P.H., Morgan, Hywel and Ashburn, Peter (2011) Inflammatory biomarker sensing using rectangular polycrystalline silicon nanowires made by dry etching. In, Proceedings of the 15th International Conference on Miniaturized Systems for Chemistry and Life Sciences, Seattle, USA, 02 - 06 Oct 2011. , .
Mohamed Sultan, Suhana, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Al Hakim, Mohammad, Sun, Kai, Ashburn, Peter and Chong, Harold (2011) Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications. At Micro and Nano Engineering, Berlin, Germany, 19 - 23 Sep 2011.
Uchino, Takashi, Hutchison, J. L., Ayre, G., Smith, D. C., de Groot, C. H. and Ashburn, Peter (2011) Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures. Jpn. J. Appl. Phys, 50, (4)
Mohamed Sultan, Suhana, Sun, Kai, Partridge, J, Allen, M, Ashburn, Peter and Chong, Harold (2011) Fabrication of ZnO Nanowire Device Using Top-Down Approach. At 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork,Ireland, 14 - 16 Mar 2011. IEEE, .
Hakim, M. M. A., Abuelgasim, A., Tan, L., Groot, C. H. De, White, W. Redman-, Hall, S. and Ashburn, P. (2011) Improved Drive Current in RF Vertical MOSFETS Using Hydrogen Anneal. IEEE ELECTRON DEVICE LETTERS, 32, (3), .
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2011) Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors. Electrochemical Society Letters, 156, (8), .
Uchino, Takashi, Ayre, G., Smith, D. C., Hutchison, J. L., Groot, C. H. de and Ashburn, Peter (2011) Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors. Electrochemical and Solid-State Letters, 14, (4), .
Ayre, G.N., Uchino, T., Mazumder, B., Hector, A.L., Hutchison, J.L., Smith, D.C., Ashburn, P. and de Groot, C.H. (2011) On the mechanism of carbon nanotube formation: the role of the catalyst. Journal of Physics Condensed Matter, 23, (39), . (doi:10.1088/0953-8984/23/39/394201) (PMID:21921315)
Ayre, G.N., Uchino, T., Mazunder, B., Hector, A.L., Hutchinson, J.L., Smith, D.C., Ashburn, Peter and De Groot, Kees (2011) On the mechanism of carbon nanotube formation: the role of the catalyst. J. Phys.: Condens. Matter, 23, (394201)
Uchino, T., Hutchinson, J. L., Ayre, G.N., Smith, D.C., De Groot, Kees and Ashburn, Peter (2011) Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures. Jpn. J. Appl. Phys., 50, (04DN02)
2010
Hakim, M.M.A., Tan, L., Abuelgasim, A., de Groot, C.H., Redman-White, W., Hall, S. and Ashburn, P. (2010) Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications. IEEE Transactions on Electron Devices, 57, (12), .
Mallik, Kanad, Abuelgasim, Ahmed, Ashburn, Peter and De Groot, Kees (2010) Deep level dopant compensated Czochralski silicon substrates for MMICs. At ARMMS RF & Microwave Society Conference, Northampton,
Kai, Sun, Hakim, M. M. A., Kong, J., Planque, M. R. R. de, Morgan, H., Roach, P. L., Davis, D. E., Howarth, P. and Ashburn, P. (2010) Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications. At The 36th International Conferenece on Micro & nano Engineering, Genoa, Itlay, 19 - 22 Sep 2010.
Abuelgasim, Ahmed, Mallik, Kanad, De Groot, Kees, Ashburn, Peter, Jordan, D.M. and Wilshaw, P.R. (2010) High-resistivity Czochralski-silicon using Deep Level Doping Compensation. At ESSDERC 2010, Sevilla, Spain,
Sámson, Z. L., Zhang, J., Adamo, G., Uchino, Takashi, Gholipour, B., Knight, K., Huang, C., Angelis, F., MacDonald, K. F., Ashburn, Peter, Fabrizio, E., Hewak, D. W. and Zheludev, N. I. (2010) Chalcogenide plasmonic metamaterial switches. At SPIE Optics + Photonics 2010, San Diego, USA,
Sun, Kai, Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Low cost nanowire biosensor fabrication using thin film amorphous silicon crystallisation technologies. At IDRN, Leceister, UK, 14 May 2010.
Nikolaenko, A. E., De Angelis, F., Boden, Stuart, Papasimakis, N., Ashburn, Peter, Di Fabrizio, E. and Zheludev, N. I. (2010) Carbon nanotubes in a photonic metamaterial. Physical Review Letters, 104, .
Nikolaenko, Andrey E., De Angelis, Francesco, Boden, Stuart A., Papasimakis, Nikitas, Ashburn, Peter, Di Fabrizio, Enzo and Zheludev, Nikolay I. (2010) Carbon nanotubes in a photonic metamaterial. Physical Review Letters, 104, (15), . (doi:10.1103/PhysRevLett.104.153902)
Uchino, Takashi, Ayre, G., Smith, D. C., Hutchison, J. L., de Groot, C. H. and Ashburn, Peter (2010) Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors. Jpn. J. Appl. Phys, 49, .
Tan, L., Hakim, M.M.A., Connor, S., Bousquet, A., de Groot, C.H., Redman-White, W, Hall, S. and Ashburn, P. (2010) Compact model extraction issues of nonstandard CMOS compatible vertical MOSFETs. At 10th International Conference on ULtimate Integration of Silicon (ULIS), Glasgow, GB, 17 - 19 Mar 2010.
Kai, Sun, Hakim, M. M. A. and Ashburn, P. (2010) Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications. At International Symposium on Atom-scale Si Hybrid Nanotechnologies, Southampton, UK, 01 - 02 Mar 2010.
Mohamed Sultan, Suhana, Singjai, P, Ashburn, Peter and Chong, Harold (2010) Silicon Compatible ZnO Nanowire FET:Modeling and Simulation. At 2010 International Symposium on Atom-scale Si Hybrid Nanotechnologies, University of Southampton, 01 - 02 Mar 2010. (Submitted)
Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modelling of CNT transistors with ballistic and non ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 9, (1), .
Ayre, G.N., Uchino, Takashi, Mazumder, M, Hector, A.L., Smith, D.C., Ashburn, Peter, De Groot, Kees and Hutchinson, J.L. (2010) Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts. In, Carbon Nanotubes. , INTECH.
Kazmierski, T.J., Al-Hashimi, B.M. and Ashburn, P. (2010) Numerically efficient modeling of CNT transistors with ballistic and nonballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, .
Sun, K., Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications. Micro and Nano Engineering, Genoa, Italy, 19 - 22 Sep 2010.
Sun, K., Hakim, M.M.A., Lombardini, M., Davies, D.E., Roach, P.L., de Planque, M.R.R., Ashburn, P. and Morgan, H. (2010) Sensors for chemical detection based on top-down fabricated polycrystalline silicon nanowires. At NanoBioTech 2010, Montreux, Switzerland, 15 - 17 Nov 2010.
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2010) Metal-Catalyst-Free Growth of Carbon Nanotubes for CMOS Integration. At IEEE Solid State Device Meeting, Tokyo, Japan, 22 - 24 Sep 2010.
2009
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2009) Fe/Ge catalyzed carbon nanotube growth on HfO2 for nanosensor applications. At IEEE Solid State Devices & Materials (SSDM) Conference, Miyagi, Japan, 07 - 09 Oct 2009.
Hakim, M.M.A., Mallik, K., de-Groot, C.H., Redman-White, W, Tan, L., Hall, S. and Ashburn, P. (2009) A self-aligned silicidation technology for surround-gate vertical MOSFETS. At 39th European Solid-State Device Research Conference (ESSDERC 2009), Athens, GR, 14 - 18 Sep 2009.
Hakim, M.M.A., Mallik, K., de Groot, C.H., Redman-White, W., Ashburn, P., Tan, L. and Hall, S. (2009) A self-aligned silicidation technology for surround gate vertical MOSFETs. At European Solid State Device Research Conference (ESSDERC), Athens, GR, 14 - 18 Sep 2009. 4pp, .
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2009) Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation. Journal of The Electrochemical Society, 156, (8), . (doi:10.1149/1.3147248)
Sun, K., Hakim, M. M. A. and Ashburn, P. (2009) Metal Induced Lateral Crystallization of Amorphous Silicon Nanoribbons for Application in Biosensors. At E-MRS 2009 Spring Meeting, Strasbourg, France, 08 - 12 Jun 2009.
Tan, L, Hakim, M. M. A., Connor, S., Bousquet, A., White, W. Redman-, Ashburn, P. and Hall, S. (2009) Characterisation of CMOS Compatible Vertical MOSFETs with New Architectures through EKV Parameter Extraction and RF Measurement. At 10th International Conference on ULtimate Integration of Silicon (ULIS), Aachen, Germany, 18 - 20 Mar 2009.
Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2009) Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology (Submitted)
Tan, L., Hakim, M.M.A., Connor, S., Bousquet, A., Redman-White, W., Ashburn, P. and Hall, S. (2009) Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement. At Ultimate Integration on Silicon (ULIS) Conference, Aachen, 18 - 20 Mar 2009. , .
Ashburn, P and Hall, S (2009) PAPERS SELECTED FROM THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE - ESSDERC'08 Foreword. SOLID-STATE ELECTRONICS, 53, .
Hakim, M M A, Tan, L, Buiu, O, Redman-White, W, Hall, S and Ashburn, P (2009) Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation. Solid State Electronics, 53, .
Hakim, M. M. A., Tan, L., Buiu, O., White, W. Redman-, Hall, S. and Ashburn, P. (2009) Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation. Solid State Electronics, 53, .
Uchino, T, Ayre, GN, Smith, DC, Hutchison, JL, de Groot, CH and Ashburn, P (2009) Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156, .
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2009) Fe/Ge catalyzed carbon nanotube growth on HfO/sub 2/ for nano-sensor applications. Proceedings of the 39th European Solid-State Device Research Conference. ESSDERC 2009, .
Uchino, Takashi, Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, Peter (2009) Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation. Journal of the Electrochemical Society, 156, (8), .
2008
Hakim, M.M.A., Uchino, T., Redman-White, W., Ashburn, P., Tan, L., Buiu, O. and Hall, S. (2008) Improved sub-threshold Slope in RF vertical MOSFETS using a frame gate architecture. At 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, GB, 15 - 19 Sep 2008. 4pp.
Tan, L, Buiu, O, Hall, S, Gill, E, Uchino, T and Ashburn, P (2008) The influence of junction depth on short channel effects in vertical sidewall MOSFETs. SOLID-STATE ELECTRONICS, 52, .
Tan, L., Buiu, O., Hall, S., Gili, E, Uchino, T. and Ashburn, P. (2008) The influence of junction depth on short channel effects in vertical MOSFETs. Solid State Electronics, 52, (7), .
Tan, L., Hakim, M.M.A., Uchino, T., Redman-White, W., Ashburn, P. and Hall, S. (2008) Asymmetrical IV characteristics and junction regions in implantation defined surround gate vertical MOSFETs. At 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing, China,
Tan, L., Hall, S., Buiu, O., Hakim, M.M.A., Uchino, T., Ashburn, P. and Redman-White, W. (2008) Series resistance in vertical MOSFETs with reduced drain/source overlap capacitance. At 9th International Conference on Ultimate Integration of Silicon (ULIS 2008), Udine, IT, 12 - 14 Mar 2008. 4pp, .
2007
Hall, S., Tan, L., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman- (2007) VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS. In, International Semiconductor Conference, CAS
Hakim, M.M.A. and Ashburn, P. (2007) Increased lateral crystallization width during nickel induced lateral crystallization of amorphous silicon using fluorine implantation. Journal of the Electrochemical Society, 154, (8), .
Hakim, M.M.A. and Ashburn, P. (2007) Mechanism of germanium-induced perimeter crystallization of amorphous silicon. Journal of the Electrochemical Society, 154, (4), .
Ashburn, P. and El Mubarek, H.A.W. (2007) Properties and benefits of fluorine in silicon and silicon-germanium devices. Journal of Telecommunications and Information Technology, 2, .
Abdulmalik, D.A., Coleman, P.G., El Mubarek, H.A.W. and Ashburn, P. (2007) Fluorine complexes in Si-SiGe-Si structures. Journal of Applied Physics, 102, (013530)
Ayre, G.N., Smith, D.C., Mazumder, B., Hector, J., Uchino, T., de Groot, C.H. and Ashburn, P. (2007) CMOS compatible synthesis of carbon nanotubes. At Materials Research Society Conference, San Francisco, USA, 24 - 28 Mar 2007.
El Mubarek, H.A.W. and Ashburn, P. (2007) Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices. At Materials Research Society Conference, San Francisco, USA, 09 - 13 May 2007. MRS.
El Mubarek, H.A.W. and Ashburn, P. (2007) Fluorine-vacancy engineering: a viable solution for dopant diffusion suppression in SOI substrates. Nanoscaled Semiconductor on Insulator Structures and Devices, Editors S.Hall, A.N.Nazarov, V.S.Lysenko, .
Kham, M.N., Matko, I., Chenevier, B. and Ashburn, P. (2007) Reduced boron diffusion under interstitial injection in fluorine implanted silicon. Journal of Applied Physics, 102, .
2006
Hakim, M.M.A., Matko, I., Chenevier, B. and Ashburn, P. (2006) Lateral crystallization of amorphous silicon by germanium seeding. Microelectronic Engineering, 83, (11), .
Hakim, M.M.A., Matko, I., Chenevier, B. and Ashburn, P. (2006) Perimeter crystallization of amorphous silicon around a germanium seed. Electrochemical and Solid State Letters, 9, (7), .
Gili, E., Kunz, D., Uchino, T., Hakim, M.M.A., de Groot, C.H., Ashburn, P. and Hall, S. (2006) Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance. IEEE Transactions on Electron Devices, 53, (5), .
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I.Z., El Mubarek, H.A.W. and Ashburn, P. (2006) The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates. Materials Science in Semiconductor Processing, 9, (4), .
Mallik, K, de Groot, C H, Ashburn, P and Wilshaw, P R (2006) Enhancement of resistivity of Czochralski silicon by deep level manganese doping. Applied Physics Letters, 89, (11), .
Karunaratne, M.S.A., Bonar, J.M., Ashburn, P. and Willoughby, A.F.W. (2006) Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials: some comments. Journal of Materials Science, 41, (3), .
Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Ashburn, P., Ward, P., Fiore, L., Petralia, R., Alemanni, C. and Messina, A. (2006) 110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression. IEEE Transactions on Electron Devices, 53, (3), .
Ashburn, P. and El Mubarek, H.A.W. (2006) Properties and benefits of fluorine in Si and SiGe devices. At 7th Diagnostics and Yield Symposium, Warsaw, Poland, 26 - 28 Jun 2006.
Gili, E., Uchino, T., Hakim, M.M.A., Hall, S. and Ashburn, P. (2006) Shallow junctions on pillar sidewalls for sub-100nm vertical MOSFETs. IEEE Electron Device Letters, 27, (8), .
Gluszko, G., Lukasiak, L., Gili, E. and Ashburn, P. (2006) Charge pumping characterisation of FILOX vertical MOSFETs. At 7th Symposium on Diagnostics and Yield, Warsaw, Poland, 26 - 28 Jun 2006.
Hakim, M.M.A., Matko, I., Chenevier, B. and Ashburn, P. (2006) Lateral crystallization of amorphous silicon by germanium seeding. At Materials for Advanced Metallization, Grenoble, France, 06 - 08 Mar 2006.
Hakim, M.M.A., de Groot, C. H., Gili, E., Uchino, T., Hall, S. and Ashburn, P. (2006) Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation. IEEE Transaction on Electron Devices, 53, (4), .
Kham, M.N., El Mubarek, H.A.W. and Ashburn, P. (2006) Effect of fluorine on boron diffusion under interstitial injection from the surface. At E-MRS, European Materials Research Society Conference, Nice, France, 29 May - 02 Jun 2006.
Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Chivers, D. and Ashburn, P. (2006) Effect of fluorine on boron diffusion under interstitial injection from the surface. Nuclear Instruments and Methods B, 253, .
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I., El Mubarek, H.A.W. and Ashburn, P. (2006) On the physical nature of the base current 1/f noise typical for SiGe HBTs and Si BJTs made by SEG/NSEG epitaxy. At E-MRS, European Materials Research Society, Nice, France, 29 May - 02 Jun 2006.
Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi insulating Czochralski silicon for radio frequency applications. Applied Physics Letters, 89, .
Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi-insulating Czochralski silicon for radio frequency applications. At European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland, 19 - 21 Sep 2006. , .
Mallik, Kanad, deGroot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi-insulating silicon by deep level doping for radio frequency applications. At 15th Surrey Ion Beam Centre Users' Workshop, Surrey, UK,
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S. and Ashburn, P. (2006) SiGeC HBTs: impact of C on device performance. At Nato Advanced Research Workshop, Sudak, Crimea, Ukraine, 15 - 19 Oct 2006.
Tan, L., Buiu, O., Hall, S., Gili, E. and Ashburn, P. (2006) A Technology for Building Shallow Junction MOSFETs on Vertical Pillar Walls. At 8th International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, China,
Tan, L., Buiu, O., Hall, S., Gili, E. and Ashburn, P. (2006) A technology for building shallow junction MOSFETs on vertical pillar walls. At 8th International Conference on Solid State Electronics & Integrated Technology, Shanghai, China, 23 - 26 Oct 2006.
Uchino, T., Bourdakos, K.N., de Groot, C.H., Smith, D.C. and Ashburn, P. (2006) Growth of SiOx nanowires on Ge nanodots. At NT06: 7th International conference on the science and application of nanotubes, Nagano, Japan, 18 - 23 Jun 2006.
Uchino, T., de Groot, C.H., Ashburn, P., Bourdakos, K.N. and Smith, D.C. (2006) Ge catalysed vapour liquid solid growth of carbon nanotubes. At European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland, 19 - 21 Sep 2006. , .
2005
Mitrovic, I.Z., Buiu, O., Hall, S., Bagnall, D. and Ashburn, P. (2005) Review of SiGe HBTs on SOI. Solid State Electronics, 49, (9), .
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I., El Mubarek, H.A.W. and Ashburn, P. (2005) 1/f Noise and Generation/Recombination Noise in SiGe HBTs on SOI. IEEE Transactions on Electron Devices, 52, (7), .
Kham, M.N., El Mubarek, H.A.W., Bonar, J.M. and Ashburn, P. (2005) Study of fluorine behaviour in silicon by selective point defect injection. Applied Physics Letters, 87, (1), .
Uchino, T., Bourdakos, K.N., de Groot, C.H., Ashburn, P., Kiziroglou, M.E., Dilliway, G.D. and Smith, D.C. (2005) Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands. Applied Physics Letters, 86, (23), .
Kham, M N, El Mubarek, H A W, Ashburn, P and Bonar, J (2005) Effect of fluorine on boron thermal diffusion in the presence of point defects. European Materials Research Society (E-MRS), Spring Meeting, Strasbourg, France
Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S. and Ashburn, P. (2005) SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers. IEEE Transactions on Electron Devices, 52, (3), .
El Mubarek, H.A.W., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F. and Ashburn, P. (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex. IEEE Transactions on Electron Devices, 52, (4), .
Gili, E, Uchino, T, Hakim, M M A, de Groot, C H, Ashburn, P and Hall, S (2005) A new approach to the frabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket. At 6th International Conference on ULtimate Integration of Silicon (ULIS), Bologna, Italy, 07 - 08 Apr 2005. , .
Hakim, M M A, de Groot, C H, Gili, E, Uchino, T, Hall, S and Ashburn, P (2005) Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs. At 6th International Conference on ULtimate Integration of Silicon (ULIS), Bologna, Italy, 07 - 08 Apr 2005. , .
El Mubarek, H.A.W, Wang, Y., Price, R., Bonar, J.M., Zhang, J., Hemment, P.L.F. and Ashburn, P. (2005) Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation. Materials Science in Semiconductor Processing, 8, (1-3), .
Hakim, M. M. A., Ashburn, P., de Groot, C. H., Gili, E., Uchino, T. and Hall, S. (2005) Germanium seeded crystallisation of α-Si for application in 3D integration. At PREP, Lancaster (), UK, 30 Mar - 01 Apr 2005.
Karunaratne, M.S.A., Willoughby, A.F., Bonar, J.M., Zhang, J. and Ashburn, P. (2005) Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon. Journal of Applied Physics, 97, (11), .
Mitrovic, I.Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P.L.F., El Mubarek, H.A.W. and Ashburn, P. (2005) Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications. Semiconductor Science and Technology, 20, .
Uchino, T., Bourdakos, K.N., Ashburn, P., de Groot, C.H., Kiziroglou, M.E. and Smith, D.C. (2005) Catalyst free low temperature direct growth of carbon nanotubes on SiGe islands and Ge quantum dots. At 6th International Conference on the Science and Application of Nanotubes, NT05, Gothenburg, Sweden, 26 Jun - 01 Jul 2005.
Uchino, T., Bourdakos, K.N., Ashburn, P., de Groot, C.H., Kiziroglou, M.E. and Smith, D.C. (2005) Catalyst free low temperature direct growth of carbon nanotubes on SiGe islands and Ge quantum dots. At NT05: 6th International Conference on the Science and Application of Nanotubes, Gothenburg, Sweden, 26 Jun - 02 Jul 2005.
Uchino, T., Bourdakos, K.N., De Groot,, C.H., Ashburn, P., Kiziroglou, M.E., Dilliway, G.D. and Smith, D.C. (2005) Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands. Applied Physics Letters, 86, (23), . (doi:10.1063/1.1946191)
Uchino, T., Bourdakos, K.N., de Groot, C.H., Ashburn, P., Wang, S., Kiziroglou, M.E., Dilliway, G.D. and Smith, D.C. (2005) Catalyst free low temperature, direct growth of carbon nanotubes. At IEEE Conference on Nanotechnology, IEEE-NANO, Nagoya, Japan, 11 - 15 Jul 2005.
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R. and Ashburn, P. (2005) Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. Solid State Electronics, 49, .
Xu, L., Mc.Nally, P.J., Dilliway, G.D.M., Cowern, N.E.B., Jeynes, C., Mendoza, E., Ashburn, P. and Bagnall, D.M. (2005) Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001). Journal of Materials Science: Materials in Electronics, 16, (7), .
Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A. W., Ashburn, P., Mitrovic, I.Z., Buiu, O. and Hall, S. (2005) GSMBE growth and structural characterisation of SiGeC layers for HBT. Journal of Crystal Growth, 278, .
2004
Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P (2004) Diffusion in SiGe: defect injection studies on Sb, As and B. Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu
Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques. Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu
Kunz, V D, de Groot, C H, Gili, E, Uchino, T, Hall, S and Ashburn, P (2004) CMOS-compatible vertical MOSFETs and logic gates with reduced parasitic capacitance. At 34th European Solid State Device Research Conference (ESSDERC), Leuven, Belgium, 21 - 23 Sep 2004. , .
El Mubarek, H.A.W., Bonar, J.M., Dilliway, G.D., Ashburn, P., Karunaratne, M., Willoughby, A.F., Wang, Y., Hemment, P.L.F., Price, R., Zhang, J. and Ward, P. (2004) Effect of fluorine implantation dose on boron thermal diffusion in silicon. Journal of Applied Physics, 96, (8), .
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., Hamel, J.S. and Bagnall, D.M. (2004) Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth. Microelectronic Engineering, 73, (6), .
El Mubarek, H A W, Bonar, J M and Ashburn, P (2004) Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation. Technology and Device Meeting (ISTDM), Frankfurt Oder, Germany
El Mubarek, H A W, Wang, Y, Bonar, J M, Hemment, P L F and Ashburn, P (2004) Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14. Material Research Society Symposium C Proceedings, MRS Spring Meeting, San Francisco
Hall, S, Buiu, O, Mitrovic, I, El-Mubarek, H, Ashburn, P, Bain, M, Gamble, H S, Wang, Y and Hemment, P (2004) SiGe Heterojunction Bipolar Transistors on Insulating Substrates NATO Advanced Research Workshop: Science and Technology of Semiconductor - On insulator structures devices operating in a harsh environment. Science and Technology of Semiconductor
Donaghy, D, Hall, S, de Groot, C H, Kunz, V D and Ashburn, P (2004) Design of 50nm Vertical MOSFET Incorporating a Dielectric Pocket. IEEE Transactions on Electron Devices, 51, (1), .
Hall, Stephen, Buiu, Octavian, Ashburn, Peter and de Groot, C.H., Szczepanski, P (ed.) (2004) Recent developments in vertical MOSFETs and SiGe HBTs. Journal of Telecommunications and Information Technology, 1/2004, (1), .
Uchino, Takashi, Ashburn, Peter, Kiyota, Yukihiro and Shiba, Takeo (2004) A CMOS-Compatible Rapid Vapor-Phase Doping Process for CMOS Scaling. IEEE Transactions on Electron Devices, 51, (1), .
Dillaway, G.D.M., Cowern, N.E.B., Xu, L, McNally, P.J., Jeynes, C., Mendoza, E., Ashburn, P. and Bagnall, D.M. (2004) Influence of H2 Preconditioning on the Nucleation and Growth of Self-Assembled Germanium Islands on Silicon (001). Mat. Res. Soc. Symp. Proc., 820, .
El Mubarek, H.A.W. and Ashburn, P. (2004) Reduction of boron diffusion in silicon-germanium by fluorine implantation. IEEE Electron Device Letters, 25, (8), .
Gili, E, Kunz, V D, de Groot, C H, Uchino, T, Ashburn, P, Donaghy, D C, Hall, S, Wang, Y and Hemment, P L F (2004) Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance. Solid State Electronics, (48), .
Hall, S., Donaghy, S., Buiu, B., Gili, E., Uchino, T., Kunz, V. D., de Groot, C. H. and Ashburn, P. (2004) Recent developments in deca-nanometer vertical MOSFETs. Microelectronic Engineering, 72, .
2003
Kunz, V Dominik, Uchino, Takashi, de Groot, C H (Kees), Ashburn, Peter, Donaghy, David C, Hall, Steven, Wang, Yun and Hemment, Peter L F (2003) Reduction of Parasitic Capacitance in Vertical MOSFETs by Spacer Local Oxidation. IEEE Transactions on Electron Devices, 50, (6), .
Kunz, V Dominik, de Groot, C H, Hall, Steven and Ashburn, Peter (2003) Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs. IEEE Transactions on Electron Devices, 50, (6), .
El Mubarek, H A W, Bonar, J M, Ashburn, P, Wang, Y, Hemment, P L F, Buiu, O and Hall, S (2003) Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles. Journal of Materials Science: Materials in Electronics, 14, (5), .
Mitchell, M J, Ashburn, P, Bonar, J M and Hemment, P L F (2003) Comparison of arsenic diffusion in Si1-xGex formed by epitaxy and Ge+ implantation. Journal of Applied Physics, 93, (9), .
Sheng, S R, McKinnon, W R, McAlister, S P, Storey, C, Hamel, J S and Ashburn, P (2003) Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine. IEEE Transactions on Electron Devices, 50, (4), .
El MubareK, H. A. W. and Ashburn, P. (2003) “Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation”, Applied Physics Letters, vol. 83 (20), pp. 4134-4136, (2003). Applied Physics Letters, 83, (20), .
Ashburn, P (2003) SiGe Heterojunction Bipolar Transistors, John Wiley & Sons
El Mubarek, H A W and Ashburn, P (2003) Reduction of boron thermal diffusion and elimination of boron transient enhanced diffusion in silicon by high energy fluorine implantation. Applied Physics Letters, 83, (20), .
El Mubarek, H.A.W., Bonar, J.M., Ashburn, P., Wang, Y., Hemment, P., Buiu, O. and Hall, S. (2003) Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles. Journal of Materials Science: Materials in Electronics, 14, (5), .
Gili, E, Kunz, V D, de Groot, C H, Uchino, T, Donaghy, D, Hall, S and Ashburn, P (2003) Electrical Characteristics of Single, Double and Surround Gate Vertical MOSFETs with Reduced Overlap Capacitance. At 33rd European Solid-State Device Research Conference, Estoril, Portugal, 18 - 16 Sep 2003. , .
Gili, E., Kunz, V. D., Uchino, T., De Groot, C. H. and Ashburn, P. (2003) Realization and characterization of vertical MOSFETs with reduced parasitic capacitance. At PREP, Exeter (), UK, 14 - 16 Apr 2003. , .
Hall, S, Buiu, O, Lamb, A C, El Mubarek, H A W and Ashburn, P (2003) Current crowding effects in SOI-SiGe HBTs with low doped emitters. In, 33rd European Solid State Device Research Conference, Estoril , Portugal, 16 - 18 Sep 2003. , .
Waite, A M, Lloyd, N S, Ashburn, P, Evans, A G R, Ernst, T, Achard, S, Deleonibus, S, Wang, Y and Hemment, P L F (2003) Raised source/drain for 50nm MOSFETs: effect of epitaxy layer thickness on short channel effects. At 33rd European Solid State Device Research Conference, Estoril, Portugal, 16 - 18 Sep 2003. , .
Wang, Y, Waite, A, Cerrina, C, Hemment, P L F, Ashburn, P and Evans, A G R (2003) TEM study of solid phase epitaxial growth behaviour of normal and angled Si implanted gate stack structure. At Microscopy of Semiconducting Materials Conference, Cambridge, 31 Mar - 03 Apr 2003.
2002
Abdul Rahim, A I, Marsh, C D, Ashburn, P and Booker, G R (2002) Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs. At IEEE International Conference on Semiconductor Electronics, Penang, Malaysia, , .
Ashburn, P (2002) Materials and technology issues for SiGe heterojunction bipolar transistors. Journal of Materials Science in Semiconductor Processing, 4, (6), .
Donaghy, DC, Hall, S, Kunz, VD, Groot, CH de and Ashburn, P (2002) Investigating 50nm channel length vertical MOSFET's containing a dielectric pocket in a circuit environment. ESSDERC 2002, Florence, , .
Kunz, VD, Groot, CH de, Hall, S, Anteney, IM, Abdul-Rahim, AI and Ashburn, P (2002) Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors. At ESSDERC 2002, Florence, , .
Mitchell, MJ, Ashburn, P and Hemment, P L F (2002) Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation. Journal of Applied Physics, 92, (11), .
Sabki, S N, Hashim, M R, Aziz, A A and Ashburn, P (2002) Modeling of TED of boron in the underlying silicon layer due to boron implantation. At IEEE International Conference on Semiconductor Electronics, Penang, Malaysia, , .
de Groot, C H, Kunz, V D, Ashburn, P, Donaghy, D and Hall, S (2002) ion-implanted vertical MOSFET's. At Nano and Giga challenges in Microelectronics research, Moscow,
2001
Anteney, I.M., Parker, G.J., Ashburn, P. and Kemhadjian, H.A. (2001) The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films. Journal of Applied Physics, 90, (12), .
Lukyanchikova, N, Garbar, N, Petrichuk, M, Schiz, J F W and Ashburn, P (2001) The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base. IEEE Transactions on Electron Devices, 48, (12), .
Rahim, A I A, Marsh, C D, Ashburn, P and Booker, G R (2001) Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus doped polysilicon emitter contacts. IEEE Transactions on Electron Devices, 48, (11), .
Schiz, J.F.W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J.M., Ashburn, Peter, Hall, Stephen and Hemment, Peter L. F. (2001) Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy. IEEE Transactions on Electron Devices, 48, (11), .
Lamb, A. C., Riley, L. S., Hall, S., Kunz, V.D., Groot, C. H. de and Ashburn, P. (2001) A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket. ESSDERC 2001 Frontier Group, .
Ashburn, P., Mubarek, H.A.W.El, Bonar, J.M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator. At Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, Washington , USA, Electrochemical Society, .
Schiz, J.F.W., Bonar, J.M., Lamb, A.C., Cristiano, F., Ashburn, P., Hall, S. and Hemment, P.L.F. (2001) Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. Journal of Microelectronics and Reliability, 41, (2), .
Ashburn, P., El Mubarek, H.A.W., Bonar, J.M. and Redman-White, W. (2001) SiGe Heterojunction Bipolare Transistors on Insulator. In, Electrochemical Society Meeting, Seattle, USA,
Hall, S., Lamb, A. C., Bain, M., Armstrong, B. M., Gamble, H., Murabek, H. A. W. and Ashburn, P. (2001) SiGe HBTs on Bonded Wafer Substrates. Microelectronic Engineering, 59, .
Marsh, C D, Nash, G R, Schiz, J F W, Booker, G R and Ashburn, P (2001) TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950C. At Microscopy of Semiconducting Materials Conference, Oxford, UK,
2000
Graoui, H., Nejim, A., Hemment, P.L.F., Riley, L., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge implantation; structural and electrical characterisation. Proceedings of Ion Implantation Technology Conference
Mitchell, M., Ashburn, P., Graoui, H., Hemment, P.L.F., Lamb, A., Hall, S. and Nigrin, S. (2000) A comparison of pnp and npn SiGe HBTs fabricated by Ge implantation. Proceedings of 30th European Solid State Device Research Conference Elsevier, .
Anteney, I M, Parker, G J, Ashburn, P and Kemhadjian, H A (2000) Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films. Applied Physics Letters, 77, (4), .
Marsh, C.D., Moiseiwitsch, N.E., Booker, G.R. and Ashburn, P. (2000) Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers. Journal of Applied Physics, 87, (10), .
1999
Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J. and Knoll, D. (1999) Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's. IEEE Electron Device Letters, 20, .
Bonar, J M, Schiz, J and Ashburn, P (1999) Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy. Journal of Materials Science: Materials in Electronics, 10, .
Castaner, L, Silvestri, L, Carter, J, Parton, D and Ashburn, P (1999) Effects of fluorine in silicon solar cells with polysilicon contacts. Journal of Solar Energy Materials and Solar Cells, 53, .
Hashim, Md R, Lever, R F and Ashburn, P (1999) 2D simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant. Solid State Electronics, 43, .
Marsh, C D, Moiseiwitsch, N E, Nash, G R, Booker, G R and Ashburn, P (1999) Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean. Proceedings of the Microscopy of Semiconducting Materials Conference , .
Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, P. (1999) Characterisation of npn and pnp SiGe HBTs formed by Ge implantation. Proceedings of IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , .
Nash, G.R., Schiz, J.F.W., Marsh, C.D., Ashburn, P. and Booker, G.R. (1999) Activation energy for fluorine transport in amorphous silicon. Applied Physics Letters, 75, (23), .
Schiz, J F W and Ashburn, P (1999) Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide. Electronics Letters, 35, (9), .
Schiz, J F W, Bonar, J M, Lamb, A C, Cristiano, F, Ashburn, P, Hemment, P L F and Hall, S (1999) Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. Proceedings of 29th European Solid State Device Research Conference Editions Frontieres, .
1998
Anteney, I M, Ashburn, P, Parker, G J, Lippert, G and Ashburn, P (1998) Effect of carbon position in the base for the elimination of parasitic energy barriers in SiGe:C HBTs. Proceedings of European Solid State Device Research Conference , .
Marsh, C D, Booker, G R, Moiseiwitsch, N E, Schiz, J F W and Ashburn, P (1998) TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation. Proceedings of Materials Research Society Spring Meeting , .
Moiseiwitsch, N E, Marsh, C D, Ashburn, P and Booker, G R (1998) Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication. Electrochemical and Solid State Letters, 1, .
Schiz, J F W, Bonar, J M and Ashburn, P (1998) A selective/non selective epitaxy process for a novel SiGe HBT architecture. Proceedings of Materials Research Society Spring Meeting , .
Souifi, A, Barros, O De, Bremond, G, Tron, B Le, Mouis, M, Vincent, G and Ashburn, P (1998) Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy. Journal of Vacuum Science and Technology, B16, .
Wainwright, S P, Hall, S, Ashburn, P and Lamb, A C (1998) Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model. IEEE Transactions on Electron Devices, 45, .
1997
Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J (1997) Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , .
Bonar, J M, Schiz, J and Ashburn, P (1997) Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces. Proceedings of Microscopy of Semiconducting Materials Conference , .
Hashim, M D R, Lever, R F and Ashburn, P (1997) Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting , .
Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P (1997) The effects of fluorine on the epitaxial regrowth of arsenic doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic doped polysilicon. Proceedings of Microscopy of Semiconducting Materials Conference Institute of Physics, .
Moiseiwitsch, N E, Kennedy, G P, Wainwright, S, Ashburn, P and Hall, S (1997) The design and characterisation of a SiGe I2L technology. Proceedings of European Solid State Device Research Conference , .
Parker, G J, Ashburn, P and Bonar, J M (1997) LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices. Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy , .
Rahim, A I Abdul, Marsh, C D, Ashburn, P and Booker, G R (1997) Improved control of polysilicon emitter interfacial oxide using a UHV-compatible cluster tool. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , .
Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , .
Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology. IEEE Transactions on Electron Devices, 44, .
1996
Bonar, J M, Parker, G J, Gregory, H J, Xin, J and Ashburn, P (1996) Selective Silicon and Silicon-Germanium Grown by LPCVD.
Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy. Electronics Letters, 32, (9), .
Hashim, M D, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn. Journal de Physique,Colloque 3, 6, .
Ashburn, P, Boussetta, H, Hashim, M D R, Chantre, A, Mouis, M, Vincent, G and Parker, G J (1996) Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases. IEEE Transactions on Electron Devices, 43, .
Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors. Proceedings of European Solid State Device Research Conference , .
Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) "Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32. , .
Hashim, M D R, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterojunction bipolar transistors at low temperatures. UNSPECIFIED , .
Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. UNSPECIFIED IEEE, .
Schiz, J, Moiseiwitsch, N E, Marsh, C D, Ashburn, Peter and Booker, G R (1996) Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact. , .
1995
Parker, G J, Ashburn, P, Bonar, J M, Gregory, H J, Kennedy, G P and Hamel, J S (1995) LPCVD SiGe for Heterojunction Bipolar Transistors.
Gregory, H J, Ashburn, P, Kennedy, G P and Robbins, D J (1995) Electrical Characteristics of low thermal budget polysilicon emitters for Si/SiGe heterojunction bipolar transistors. , .
Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P (1995) Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal. , .
Moiseiwitsch, N E, Marsh, C, Ashburn, P and Booker, G R (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation. Applied Physics Letters, 66, .
Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Microelectronics Journal, 26, .
Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material. Journal of Applied Physics, 78
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Kemhadjian, H A (1995) Reduction of l/f noise in polysilicon emitter bipolar transistors. Solid State Electronics, 38, .
1994
Ashburn, P, Nouailhat, A and Chantre, A (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6. Journal de Physique, 4, .
Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications. , .
Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD growth of SiGe for device applications.
Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD Growth of Silicon-Germanium for Device Applications. Research Journal, The University of Southampton
Giroult-Matlakowski, G, Bousetta, H, LeTron, B, Dutartre, D, Warren, P, Bouzid, M J, Nouailhat, A, Ashburn, P and Chantre, A (1994) Low temperature performance of self-aligned,etched polysilicon emitter pseudo-HBTs. Journal de Physique, 4, (C6), .
Marty, A, Nouailhat, A and Ashburn, P (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology. Japanese Journal of Applied Physics, 33, .
Moiseiwitsch, N E and Ashburn, P (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation. , .
Moisiewitsch, N E and Ashburn, P (1994) The benefits of fluorine in pnp polysilicon emitter bipolar transistors. IEEE Trans Electron Devices, (41), .
Post, I R C, Ashburn, P and Nouailhat, A (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model. Japanese Journal of Applied Physics, .
Routley, P, Brunnschweiler, A and Ashburn, P (1994) Optimisation of BiCMOS buffers for low voltage applications. Electronics Letters, 30, .
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Kemhadjian, H A (1994) Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors.
1993
Ashburn, P, Shafi, Z A, Post, I R C and Gregory, H J (1993) SiGe heterojunction bipolar transistors: the future jof silicon bipolar technology or not? , .
Chan, K K, Amaratunga, G A J, Shafi, Z A, Ashburn, P and Wong, S P (1993) Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter. Diamond and Related Materials, 2, .
Gregory, H J, Mouis, M, Mathiot, D, Robbins, D J, Glasper, J, Ashburn, P and Nigrin, S (1993) Modelling of anomalous boron diffusion in Si'SiGe HBTs. , .
Moiseiwitsch, N E and Ashburn, P (1993) Optimisation of BF2 implanted pnp polysilicon emitter bipolar transistors using rapid thermal annealing. , .
Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L, Selberherr, S, Stippel, H and Strasser, E (eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Simulation of Semiconductor Devices and Processes, 5, .
Post, I R C, Ashburn, P, Williams, J D, Moiseiwitsch, N E and Jerome, R C (1993) Polysilicon emitter bipolar transistors fabricated by rapid thermal processing. , .
Routley, P, Brunnschweiler, A and Ashburn, P (1993) The application of a multi variable optimiser to the design of CMOS buffers. Electronics Letters, 29, .
1992
Fang, W, Brunnschweiler, A and Ashburn, P (1992) An accurate analytical BiCMOS delay expression and its application to optimising high-speed BiCMOS circuits. IEEE Journal of Solid State Circuits, SC-27, .
Post, I R C and Ashburn, P (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors. IEEE Electron Device Letters, EDL-13, .
Post, I R C, Ashburn, P and Nouailhat, A (1992) A heterojunction tunnelling model for pnl and npn polysilicon emitter bipolar transistors. Electronics Letters, 28, .
Post, I R C, Ashburn, P and Wolstenholme, G R (1992) Polysilicon emitter bipolar transistors : a review and re-evaluation of theory and experiment. IEEE Trans Electron Devices, ED-39, .
Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants. , .
Williams, J D and Ashburn, P (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions. Journal of Applied Physics, 72, .
1991
Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors. IEEE Electron Device Letters, 12, .
Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.
Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Trans Electron Devices, ED38, .
Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors. IEEE Trans Electron Devices, ED38, .
Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors. , .
Shafi, Z A, Post, I R C, Whitehurst, J, Wensley, P, Ashburn, P, Moynagh, P B and Booker, G R (1991) Poly-crystalline silicon-carbide (SiCarb) emitter bipolar transistors. , .
1990
Parker, Dr G J, Shafi, Z A and Ashburn, P (1990) Predicted propagation delay on Si/Si:Ge heterojunction bipolar circuits. IEEE J Solid State Circuits, 25, (5), .
Siabi-Shahrirvar, N, Redman-White, W, Ashburn, P and Post, I (1990) Low frequency noise of NPN/PNP polysilicon emitter bipolar transistors. UNSPECIFIED
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. UNSPECIFIED
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Low frequency noise performance of NPN/PNP polysilicon emitter bipolar transistors. UNSPECIFIED
Fang, W, Brunnschweiler, A and Ashburn, P (1990) An analytical maximum toggle frequency expression and its application to optimising high-speed ECL frequency dividers. IEEE Journal of Solid State Circuits, SC25, .
Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors. Electronics Letters, 26, .
Roulston, D J, Gold, D P, Ashburn, P and Booker, G R (1990) Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results. Solid State Electronics, 33, .
Shafi, Z A and Ashburn, P (1990) Silicon based pseudo-heterojunction bipolar transistors. , .
Shafi, Z A, Ashburn, P and Parker, G J (1990) Predicted propagation delay of Si'SiGe heterojunction bipolar ECL circuits. Solid State Circuits, SC25, .
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. , .
Williams, J D, Ashburn, P, Moisewitsch, N E, Gold, D P, Whitehurst, J, Booker, G R and Wolstenholme, G R (1990) Epitaxial regrowth in double-diffused polysilicon emitters. , .
1989
Ashburn, P (1989) Polysilicon Emitter Technology. , .
Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A (1989) Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression. Journal of Solid State Circuits, SC24, .
Castaner, L and Ashburn, P (1989) Vertical scalability of forward delay times in bipolar transistors. IEEE Trans Electron Devices, ED36, .
Post, I R C and Ashburn, P (1989) Fabrication and characgterisation of pnp polysilicon emitter bipolar transistors. , .
Shafi, Z A, Ashburn, P and Parker, G J (1989) Predicted propogation delay of Si/Si1-xGEx heterojunction bipolar circuits. , .
1988
Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1988) Use of a gate delay expression to compare self-aligned silicon bipolar and AlGaAs/GaAs heterojunction bipolar technologies. Journal de Physique, 49, (Supple), .
Castaner, L, Ashburn, P, Prat, L and Wolstenholme, G (1988) The asymptotes of the base current in bipolar devices. IEEE Trans Electron Devioces, ED-35, .
Chor, E F, Brunnschweiler, A and Ashburn, P (1988) A gate delay expression for the optimisation of ECL processes. Journal of Solid State Circuits, SC-23, .
Wolstenholme, G R, Ashburn, P, Jorgensen, N, Gold, D and RBooker, G (1988) Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors. , .
Wolstenholme, G R, Browne, D C, Ashburn, P and Landsberg, P T (1988) An investigation of the transition from polysilicon emitter to SIS emitter behaviour. IEEE Trans Electron Devices, ED-35, .
1987
Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1987) Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits. IEEE Bipolar Circuits and Technology Meeting, .
Ashburn, P, Roulston, D J and Selvakumar, C R (1987) Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors. Trans Electron Devices, ED-34, .
Wolstenholme, G, Jorgensen, N, Ashburn, P and Booker, G R (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM. Journal of Applied Physics, 61, .
1985
Chor, E F, Ashburn, P and Brunnschweiler, A (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors. Electron Device Letters, EDL-6, .
Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors. Trans Electron Devices, ED-32, .
Cuthbertson, A and Ashburn, P (1985) Self-aligned transistors with polysilicon emitters for bipolar VLSI. IEEE Trans Electron Devices, ED-32, .
Jesshope, C R and Ashburn, P (1985) An 12L clocked gate array for undergraduate design exercises. Proceedings Part 1, 132, .
Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor. IOP Conference Series, 76, (Sectio), .
1984
Ashburn, P and Soerowirdjo, B (1984) Comparison of theory and experimental results on pilysilicon emitter bipolar transistors. IEEE Trans Electron Devices, ED-31, .
Cuthbertson, A and Ashburn, P (1984) Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters. IEEE IEDM Technical Digest, .
1983
Soerowirdjo, B and Ashburn, P (1983) Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters. Solid State Electronics, 26, .
1982
Soerowirdjo, B, Ashburn, P and Cuthbertson, A (1982) The influence of surface treatments on the electrical characteristics of polysilicon emitter bipolar transistors. IEEE IEDM Technical Digest, .
Wilson, M C, Ashburn, P, Soerowirdjo, B, Booker, G R and Ward, P (1982) The influence of surface treatments on the electrical characteristics of polysilicon emitter bipolar transistors. Journal de Physique, 43, (Supple), .
1981
Ashburn, P and Soerowirdjo, B (1981) Arsenic profiles in bipolar transistors with polysilicon emitters. Solid State Electronics, 24, .
1980
Gowers, J P, Bull, C J and Ashburn, P (1980) SEM and TEM observations of emitter/collector pipes in bipolar transistors. Journal of Microscopy, 118, .
1979
Ashburn, P (1979) Current-voltage characteristics of emitter/collector pipes in bipolar transistors. Solid State Electronics, 22, .
Ashburn, P and Bull, C J (1979) Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM. Solid State Electronics, 22, .
Ashburn, P, Bull, C J and Beale, J R A (1979) The use of the electron beam induced current mode of the SEM for observing emitter/collector pipes. Journal of Applied Physics, 50, .
Bull, C J, Ashburn, P, Booker, G R and Nicholas, K H (1979) Effects of dislocations in silicon transistors with implanted emitters. Solid State Electronics, 22, .
1977
Ashburn, P, Bull, C J, Nicholas, K H and Booker, G R (1977) Effects of dislocations in silicon transistors with implanted bases. Solid State Electronics, 20, .
1975
Ashburn, P, Morgan, D V and Howes, M J (1975) A theoretical and experimental study of recombination centres in silicon p-n junctions. Solid State Electronics, 18, .
Howes, M J, Morgan, D V and Ashburn, P (1975) The small signal admittance of carbon implanted p-n diodes. Solid State Electronics, 18, .
1974
Ashburn, P and Morgan, D V (1974) The role of radiation damage on the current-voltage characteristicfs of p-n junctions. Solid State Electronics, 17, .
Morgan, D V and Ashburn, P (1974) The electrical activity of neutron damage centres in silicon diodes. Radiation Effects, 22, .
Morgan, D V and Ashburn, P (1974) Generation-recombination of carriers in p-n junctions. Electronics Letters, 10, (7)
This list was generated on Wed May 23 03:07:50 2012 BST.
