A Thick-Film Acoustic Wave Sensor

N. M. White

(c) University of Southampton 1994


Contents

  1. Introduction
  2. The acoustic wave sensor
  3. Circuit design
  4. Experimental results and discussion
  5. Conclusion
  6. References

1. Introduction

Acoustic wave sensors offer advantages of high sensitivity, good linearity, low hysteresis and wide versatility. Their main use is in the higher cost, precision areas. Low-cost, high volume applications are generally disregarded. Thick-film technology is robust, compact and inexpensive. Although commercial thick-film sensors are available, the number of applications has been limited by the lack of specific sensor pastes within the market place. A desirable exercise is to try to merge the advantages of acoustic wave sensors together with thick-film technology to provide a powerful and economic strategy for future sensor development.

Brignell et al. [1] noted that there were three main areas to which thick-film technology could contribute to future sensor development: Firstly, the provision of associated electronic circuitry which can be mounted within the sensor housing. Secondly, the technology allows the creation of support structures, such as electrode patterns, upon which sensing materials can be deposited. The final area concerns the use of the thick-film material itself as the primary sensing element.

This paper describes a sensor utilising all of the above aspects. The primary sensor material is a screen printable thick-film piezoelectric paste, similar to that reported by Baudry in 1987 [2] and Morten et al. in 1991 [3]. It comprises a lead zirconate titanate (PZT) powder, a lead borosilicate glass frit and an organic carrier which serves to give the paste the required viscosity for screen printing. The processing can be carried out using conventional thick-film equipment.

Fundamental material studies on the thick-film piezoceramic have revealed that it possesses similar properties to the bulk PZT, the exception being a reduction in the value of the relative permittivity. This is thought to arise as a result of the morphology of the film being different to that of the bulk.

2. The acoustic wave sensor

Figure 1 shows the configuration of the acoustic wave delay line sensor. The piezoelectric film and the silver/palladium electrodes were deposited onto a 96% alumina substrate (thickness 625m) using conventional thick-film processing techniques. Minimum line and space dimensions of around 200m are achievable with this technology. Hence the maximum frequency is limited to 20MHz, assuming that the velocity of the acoustic wave is limited to about 810m/s. An accurate figure for this velocity is not yet available as we have yet to establish firmly the exact nature of the wave. Also, as we are dealing with a composite structure of alumina and the new PZT thick-film, such figures are not readily available in the literature.

Figure 1: Thick-film acoustic wave sensor.

The principle of operation of the device can be understood by considering an alternating voltage applied to the input comb structure. The material between the fingers of the interdigitated electrode pattern distorts because of the piezoelectric effect. This periodic deformation gives rise to an acoustic wave propagating both towards the second electrode pattern, and in the other direction where it can be damped at the edge of the substrate to prevent it interfering with the preferred wave. By virtue of the reverse piezoelectric effect, the acoustic wave can be detected at the other end of the substrate. Typical dimensions of the substrate are 50mm long by 10mm wide. Experiments have shown that there is significant acoustic attenuation within the piezoelectric thick-film. One consequence of this is that the effect of unwanted reflections from the edge of the substrate is eliminated.

Figure 2 shows how the sensor is used as a delay line oscillator. Two acoustic wave devices are depicted; an active device which responds to the measurand, and a passive device for temperature compensation. For the purpose of testing, we simulated the passive device with a HP 8656 signal generator. The delay line oscillator is excited at its resonant frequency and the output of the device is fed into a high-gain amplifier. A phase shifting network closes the loop. The latter is adjustable and allows resonance to occur for slightly different sample dimensions.

Figure 2: Delay line oscillator circuit.

3. Circuit design

The loop amplifier comprises three stages: the input, gain and output stage. The input stage is essentially a shunt-voltage feedback amplifier acting as a current-to-voltage converter. It was designed to have a bandwidth of 20MHz, which is greater than the resonant frequency of a typical sensor (8MHz). The measured value of the capacitance of the sensor was 64pF, and so in order to reduce signal degradation the input impedance was designed to be low, around 4.5 at 8MHz. The gain stage is based on a cascode arrangement giving a high gain-bandwidth product. Analysis of the circuit revealed a bandwidth of 60MHz and a mid-band gain of 250. The output stage drives the acoustic wave sensor. The circuit used is a two-stage, DC-coupled common emitter amplifier with series-voltage feedback. An emitter follower circuit could not be used as the output impedance tends to be inductive in nature and because this is driving the sensor directly (which is capacitive in nature) there will be a tendency to oscillate. The overall design of the amplifier is given in Figure 3.

Figure 3: Schematic of loop amplifier.

The main objective is to measure the frequency shift which occurs in response to the measurand. A single sideband suppressed carrier modulator was adopted to mix the two signals from the active and passive devices. The two signals differ in frequency by a few kHz. Following the mixer, the signal is filtered with a sixth-order bandpass filter and finally fed in a phase locked loop (PLL) to generate a DC output voltage. The complete circuit together with the sensor has been designed to fit onto a 50mm by 50mm standard alumina tile. The circuit layout was achieved using a package called ICEBOX developed within the department. The following results were achieved using a thick-film sensor with the electronic circuitry built on a prototype board. The full hybrid version is currently being fabricated.

4. Experimental results and discussion

Initial experiments were undertaken to observe the frequency response of the sensor alone. A number of sample devices having different electrode spacings and number of fingers were observed. The results indicated that the thick-film devices could generally be modelled using a similar approach to that used with surface acoustic wave (SAW) sensors. For example, increasing the number of fingers gives a sharper Q-factor and the shape of the frequency response is a sinc function, as predicted using a delta-function model [4]. However, one noticeable point was the occurrence of a double-peak exhibited by some of the devices. This is believed to arise because of reflections of the acoustic wave between adjacent fingers in the interdigitated transducer pattern. This effect was eliminated using a double-fingered electrode pattern. The reflected wave is then transposed to a frequency which is twice that of the resonant frequency of the sensor (i.e. greater than 16MHz). The second peak can then easily be removed by filtering.

A test jig was constructed to allow the samples to be used as freely-supported beams. A mass was applied in the centre of the beam and the associated surface strain increased the acoustic path length, and hence reduced the resonant frequency of the sensor. Figure 4 shows how the frequency changes in response to an applied mass. The graph shows a linear characteristic, which is to be expected for the relatively small force applied to the substrate.

Figure 4: Frequency change against applied mass.

The device exhibits a suitable response for use in physical measurements, particularly in areas such as torque, pressure and low-magnitude force measurement. Its potential use in other areas such as chemical sensors has yet to be established. Indeed, this programme of work is still in its infancy as there are many fundamental issues still to be addressed. In particular, optimising the electrode geometries and investigating the exact nature of the acoustic wave. Many possibilities exist including; surface waves, bulk waves, Lamb waves, Love waves, deep bulk acoustic waves (DBAW) and Stonely waves, to name but a few. Further improvements to the design of the loop amplifier are currently being made to allow a wider range of devices with different resonant frequencies to be accommodated. The present amplifier is optimised for a frequency of 8MHz.

The effect of temperature upon the acoustic wave sensors has been observed. Not too surprisingly they have a large temperature coefficient. As the temperature increases, the electrode separation also increases thereby causing a shift in resonant frequency. A second effect is that the size of the acoustic gap also changes with temperature. The overall temperature coefficient is around -100ppm/C. For a resonant frequency of 8MHz this equates to a frequency shift of about 800 Hz/C.

Clearly, the thick-film acoustic wave device could be used directly as a temperature sensor. For other measurands such as force, pressure, acceleration etc., the response to temperature is undesirable. The principles of intelligent sensors [5] may therefore need to be adopted. Techniques such as compensation by design symmetry and monitored compensation (or sensor-within-a-sensor) can be used to minimise the problem.

5. Conclusion

The area of thick-film sensors is expanding considerably. The major attractions of these devices are their low-cost, robust and miniaturised nature. We have used the technology to produce an acoustic wave sensor, a device which has traditionally only been found in higher cost, precision applications. The versatility of such a device has the potential for expanding the technology into new sensor fields. It is predicted that low-cost acoustic wave sensors will find use in many application areas, particularly where disposable devices are required.

6. References

  1. Brignell, J. E., White, N. M. and Cranny, A. W. J.:`Sensor applications of thick-film technology' , IEE Proc. Pt. I, 1988, 135, No. 4, pp 77-84.

  2. Baudry, H.: `Screen printing piezoelectric devices', Proc. 6th Europ. Microel. Conf., Bournemouth, 1987, pp 456-463.

  3. Morten, B., De Cicco, G., Gandolfi, A., and Tonelli, C.:`Advances in ferroelectric thick-film materials and sensors', Proc. 8th Europ. Microel. Conf., Rotterdam, 1991, pp 392-399.

  4. Tancrell, R. H. and Holland, M. G.:`Acoustic surface wave filters' Proc IEEE, 1971, 59, pp 393-409.

  5. Brignell, J. E. and White, N. M.: `Intelligent sensor systems', IOP Publishing, Bristol, 1994, ISBN 07503 0297 6.