The University of Southampton

Schottky barriers for spin injection

Date:
2005-2010
Themes:
Quantum Electronics and Spintronics, Nanoelectronics
Funding:
EPSRC (Platform grant on high frequency Si nanodevices)

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of very high quality for relatively low Si resistivities (1-2 Ohmcm with leakage currents order of magnitudes lowe than for sputtered barriers. This shows that electrodeposition of magnetic materials on Si is a viable fabrication technique for magnetoresistance and spintronics applications. This technique will be used to investigate spin injection into Si and to fabricate spin transistors

Primary investigator

  • Michail Kiziroglou

Secondary investigators

  • Muhammad Husain
  • Xiaoli Li

Associated research groups

  • Nano Research Group
  • Southampton Nanofabrication Centre
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