The University of Southampton

Ge catalytic growth of Carbon Nanotubes

bundle of single wall carbon nanotubes by Ge catalyst
Date:
2006-2010
Themes:
Nanoelectronics, Photovoltaics and Energy
Funding:
EPSRC ("Metal-Free Carbon nanotube Growth for nanoelectronics applications")

A metal catalyst free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition (CVD) of CNTs on carbon implanted SiGe islands on Si substrates. From SEM and Raman measurements, the fabricated CNTs are identified as single wall CNTs (SWNTs) with diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000°C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal free CNTs, opening up the prospect of merging CNT devices into silicon very-large-scale-integration (VLSI) technology.

Primary investigators

  • Peter Ashburn
  • Kees De Groot
  • Takashi Uchino
  • David Smith (Physics)

Secondary investigators

  • Michail Kiziroglou
  • Bourdakos Konstantinos (Physics)

Partner

  • University of Oxford

Associated research groups

  • Nano Research Group
  • Southampton Nanofabrication Centre
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