The University of Southampton

SiGe Heterojunctions for MOS Technologies (HMOS)

Silicon Electronic Devices, Nanomaterials and Dielectrics

The UK Research Programme concerned with developing SiGe MOS technologies.

Funded pricipally by the EPSRC, 13 research teams from 9 UK universities work together on the programme along with industrial partners Avant!, Daimler- Chrysler, Infineon Technologies and Zarlink Semiconductor.

The project is concerned with the integration of strained silicon and silicon germanium layers in decananometre CMOS processes, with both conventional doped polysilicon gate and metal replacement gate processes. Work is also focused on limited area growth SiGe for virtual substrate strained silicon devices and the integration of a high-k gate dielectric into a SiGe MOS process.

Primary investigators

  • agre
  • ytt
  • br

Secondary investigators

  • uns97r
  • amw


  • University of Warwick
  • University of Cambridge
  • Imperial College
  • University of Sheffield
  • University of Newcastle Upon Tyne
  • Loughborough University
  • University of Glasgow
  • Infineon Technologies
  • Daimler- Chrysler
  • Zarlink Semiconductor
  • Avant!

Associated research group

  • Nano Research Group
Share this project FacebookGoogle+TwitterWeibo

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.