The University of Southampton

Schottky barriers for spin injection

Quantum Electronics and Spintronics, Nanoelectronics
EPSRC (Platform grant on high frequency Si nanodevices)

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of very high quality for relatively low Si resistivities (1-2 Ohmcm with leakage currents order of magnitudes lowe than for sputtered barriers. This shows that electrodeposition of magnetic materials on Si is a viable fabrication technique for magnetoresistance and spintronics applications. This technique will be used to investigate spin injection into Si and to fabricate spin transistors

Primary investigator

  • mk09v

Secondary investigators

  • mkh05r
  • xl04r

Associated research groups

  • Nano Research Group
  • Southampton Nanofabrication Centre
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