The University of Southampton

Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates

Memory switching characteristics of electrodeposited GST devices
Nanoelectronics, Quantum Electronics and Spintronics, Materials & Technology
EPSRC (EP/I010890/1), EPSRC (EP/N035437/1)

This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.

Primary investigators

  • Kees De Groot
  • Phil Bartlett (Chemistry)
  • Gill Reid (Chemistry)
  • Andrew Hector (Chemistry)
  • David Smith (Physics)
  • Ruomeng Huang
  • Yasir Noori

Secondary investigators

  • Katarina Cicvaric
  • Daniel Newbrook


  • University of Warwick
  • University of Nottingham

Associated research group

  • Sustainable Electronic Technologies
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