The University of Southampton

Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates

Memory switching characteristics of electrodeposited GST devices
Nanoelectronics, Quantum Electronics and Spintronics, Materials & Technology
EPSRC (EP/I010890/1), EPSRC (EP/N035437/1)

This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.

Primary investigators

  • Kees De Groot
  • Phil Bartlett (Chemistry)
  • Gill Reid (Chemistry)
  • Andrew Hector (Chemistry)
  • David Smith (Physics)
  • Ruomeng Huang
  • Yasir Noori

Secondary investigators

  • Katarina Cicvaric
  • Daniel Newbrook


  • University of Warwick
  • University of Nottingham

Associated research group

  • Sustainable Electronic Technologies
Share this project FacebookGoogle+TwitterWeibo

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.